BU1006A-E3, BU1008A-E3, BU1010A-E3
www.vishay.com
Vishay General Semiconductor
Revision: 16-Aug-13
1
Document Number: 84800
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Enhanced isoCink+™ Bridge Rectifiers
* Tested to UL standard for safety electrically isolated
semiconductor devices. UL 1557 4th edition.
Dielectric tested to maximum case, storage and junction
temperature to 150 °C to withstand 1500 V.
Epoxy meets UL 94 V-0 flammability rating.
FEATURES
• UL recognition file number E309391 (QQQX2)
UL 1557 (see *)
• Thin single in-line package
• Available for BU-5S lead forming option
(part number with “5S” suffix, e.g. BU1006A5S)
• Superior thermal conductivity
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances and
white-goods applications.
MECHANICAL DATA
Case: BU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Notes
(1)
With 60 W air cooled heatsink
(2)
Without heatsink, free air
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
Package BU
I
F(AV)
10 A
V
RRM
600 V, 800 V, 1000 V
I
FSM
90 A
I
R
5 μA
V
F
at I
F
= 5.0 A 0.94 V
T
J
max. 150 °C
Diode variations In-Line
+
~
~
-
-
~
~
+
isoCink+™
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BU1006A BU1008A BU1010A UNIT
Maximum repetitive peak reverse voltage V
RRM
600 800 1000 V
Average rectified forward current (Fig. 1, 2)
T
C
= 90 °C
(1)
I
O
10
A
T
A
= 25 °C
(2)
3.0
Non-repetitive peak forward surge current
8.3 ms single sine-wave, T
J
= 25 °C
I
FSM
90 A
Rating for fusing (t < 8.3 ms) T
J
= 25 °C I
2
t33A
2
s
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous forward
voltage per diode
(1)
I
F
= 5.0 A
T
A
= 25 °C
V
F
1.02 1.10
V
T
A
= 125 °C 0.94 1.00
Maximum reverse current per diode rated V
R
T
A
= 25 °C
I
R
-5.0
μA
T
A
= 125 °C 45 250
Typical junction capacitance per diode 4.0 V, 1 MHz C
J
30 - pF
