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BAT54W-HE3-08

P1-P3P4-P4
BAT54W
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 27-Feb-13
1
Document Number: 85666
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Valid provided that electrodes are kept at ambient temperature
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
BAT54W
BAT54W-E3-08 or BAT54W-E3-18
Single diode L4 Tape and reel
BAT54W-HE3-08 or BAT54W-HE3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
30 V
Forward continuous current
(1)
I
F
200 mA
Repetitive peak forward current
(1)
t
p
< 1 s, < 0.5 I
FRM
300 mA
Surge forward current
(1)
t
p
= 10 ms I
FSM
600 mA
Power dissipation
(1)
P
tot
150 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
650 K/W
Maximum junction temperature T
j
125 °C
Storage temperature range T
stg
- 65 to + 150 °C
Operating temperature range T
op
- 55 to + 125 °C
BAT54W
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 27-Feb-13
2
Document Number: 85666
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: t
p
< 300 μs, < 2 %
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Typical Forward Current vs. Forward Voltage vs.
Various Temperatures
Fig. 2 - Typical Capacitance vs. Reverse Applied Voltage
Fig. 3 - Typical Reverse Current vs. Reverse Voltage vs.
Various Temperatures
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reserve breakdown voltage Tested with 100 μA pulses V
(BR)
30 V
Leakage current
(1)
V
R
= 25 V I
R
2μA
Forward voltage
(1)
I
F
= 0.1 mA V
F
240 mV
I
F
= 1 mA V
F
320 mV
I
F
= 10 mA V
F
400 mV
I
F
= 30 mA V
F
500 mV
I
F
= 100 mA V
F
800 mV
Diode capacitance V
R
= 1 V, f = 1 MHz C
D
10 pF
Reserve recovery time
I
F
= 10 mA, I
R
= 10 mA,
i
R
= 1 mA, R
L
= 100
t
rr
5ns
18867
1000
100
10
1
0.1
0.01
I - Forward Current (mA)
F
00.4
0.6 1.2 1.4
0.8 10.2
V
F
- Forward Voltage (V)
= 125 °CT
j
25 °C
- 40 °C
18868
10
14
12
2
4
0
0 4 12 16 20 24 28
C - Typical Capacitance (pF)
D
V
R
- Reverse Voltage (V)
6
8
8
100
1000
10
1
0.1
0.01
510152002530
V
R
- Reverse Voltage (V)
I - Reverse Current (µA)
R
18869
= 125 °CT
j
100 °C
75 °C
50 °C
25 °C
BAT54W
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 27-Feb-13
3
Document Number: 85666
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting Pad Layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026)
0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
1.35 (0.053)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
P1-P3P4-P4

BAT54W-HE3-08

Mfr. #:
Buy BAT54W-HE3-08
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 200mA 30 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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