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STE26NA90
P1-P3
P4-P6
P7-P8
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Output
Characteris
tics
Trans
condu
ctance
Gate
Charge
vs
Gate-so
urce
Voltage
Trans
fer
Character
isti
cs
Static
Drain-s
ource
On Resis
tance
Capacitance
Variations
STE26N
A90
4/8
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Norma
lized
Gate Threshold
Voltage
vs
Temperature
Source-dra
in
Diode
Forwar
d Characterist
ics
Norma
lized
On Resist
ance
vs Temperature
STE26N
A90
5/8
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Fig
. 1:
Unclamped
Inductive
Load
T
est Circu
it
Fig
. 3:
Switchi
ng
Times
Test
Circuits
For
Resi
stive
Load
Fig.
2:
Uncl
amped
Inductive
Waveform
Fig.
4:
Gate
Charge
test Circ
uit
Fig.
5:
Test Cir
cuit
For Inductiv
e
Load Swit
ching
And
Diode
Recovery
Times
STE26N
A90
6/8
P1-P3
P4-P6
P7-P8
STE26NA90
Mfr. #:
Buy STE26NA90
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 900V 26A ISOTOP
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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Products related to this Datasheet
STE26NA90