IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA130N10T
IXFP130N10T
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 55 93 S
C
iss
5080 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 630 pF
C
rss
95 pF
t
d(on)
30 ns
t
r
47 ns
t
d(off)
44 ns
t
f
28 ns
Q
g(on)
104 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 25A 30 nC
Q
gd
29 nC
R
thJC
0.42 °C/W
R
thCH
TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
T
J
= 25°C unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V 130 A
I
SM
Repetitive, pulse width limited by T
JM
350 A
V
SD
I
F
= 25A, V
GS
= 0V, Note 1 1.0 V
t
rr
67 ns
I
RM
4.7 A
Q
rr
160 nC
Notes: 1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5 mm or less from the package body.
TO-263 (IXFA) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
TO-220 (IXFP) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
I
F
= 65A, -di/dt = 100A/μs
V
R
= 0.5 • V
DSS
, V
GS
= 0V
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 25A
R
G
= 5Ω (External)
