BAT42W-G, BAT43W-G
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 22-Feb-18
1
Document Number: 85237
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Case: SOD-123
Weight: approx. 9.4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• These diodes feature very low turn-on voltage
and fast switching. These devices are protected
by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
• For general purpose applications
• AEC-Q101 qualified available
(part number on request)
• Base P/N-G3 - green commercial grade
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Valid provided that electrodes are kept at ambient temperature
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PARTS TABLE
PART ORDERING CODE
CIRCUIT
CONFIGURATION
TYPE MARKING REMARKS
BAT42W-G BAT42W-G3-08 or BAT42W-G3-18 Single LC
Tape and reel
BAT43W-G BAT43W-G3-08 or BAT43W-G3-18 Single LD
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
30 V
Forward continuous current
(1)
I
F
200 mA
Repetitive peak forward current
(1)
t
p
< 1 s, < 0.5 I
FRM
500 mA
Surge forward current
(1)
t
p
< 10 ms I
FSM
4A
Power dissipation
(1)
T
amb
= 65 °C P
tot
200 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
300 K/W
Junction temperature T
j
125 °C
Operating temperature range T
op
-55 to +125 °C
Storage temperature range T
stg
-55 to +150 °C