POWERDI is a registered trademark of Diodes Incorporated.
DMN7022LFG
Document number: DS37008 Rev. 1 - 2
2 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN7022LFG
ADVANCE INFORMATION
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
75 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
7.8
6.2
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
10.5
8.4
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
56 A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
2.1 A
Avalanche Current, L = 0.1mH
I
AS
28.8 A
Avalanche Energy, L = 0.1mH
E
AS
42.2 mJ
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
0.9
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θ
JA
125
°C/W
t<10s
67
Total Power Dissipation (Note 6)
P
D
2
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θ
JA
62
°C/W
t<10s
34
Thermal Resistance, Junction to Case (Note 6)
R
JC
6.9
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
75 — — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1 µA
V
DS
= 75V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
th
1 — 3 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS(ON)
— 14.6 22
mΩ
V
GS
= 10V, I
D
= 7.2A
— 20.5 28
V
GS
= 4.5V, I
D
= 6.4A
Diode Forward Voltage
V
SD
— 0.72 — V
V
GS
= 0V, I
S
= 3.2A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
2737
—
pF
V
DS
= 35V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
—
126
—
pF
Reverse Transfer Capacitance
C
rss
—
96.1
—
pF
Gate Resistance
R
— 0.89 —
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
— 26.4 —
nC
V
DS
= 38V, I
D
= 7.2A
Total Gate Charge (V
GS
= 10V) Q
— 56.5 —
nC
Gate-Source Charge
Q
s
— 12 —
nC
Gate-Drain Charge
Q
d
— 11.8 —
nC
Turn-On Delay Time
t
D
on
—
6.1
— ns
V
GS
= 10V, V
DS
= 38V,
R
G
= 1Ω, I
D
= 5.7A
Turn-On Rise Time
t
—
5.7
— ns
Turn-Off Delay Time
t
D
off
—
19.6
— ns
Turn-Off Fall Time
t
f
—
3.9
— ns
Body Diode Reverse Recovery Time
t
rr
—
26.2
—
ns
I
F
= 5.7A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
Q
rr
—
25.2
—
nC
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.