DMN7022LFG-7

POWERDI is a registered trademark of Diodes Incorporated.
DMN7022LFG
Document number: DS37008 Rev. 1 - 2
1 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN7022LFG
ADVANCE INFORMATION
NEW PRODUCT
75V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
®
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
75V
22mΩ @ V
GS
= 10V
7.8A
28mΩ @ V
GS
= 4.5V
6.9A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Features and Benefits
Low R
DS(ON)
– ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: POWERDI
®
3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN7022LFG-7
POWERDI
®
3333-8
2,000/Tape & Reel
DMN7022LFG-13
POWERDI
®
3333-8
3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
Top View Bottom View
POWERDI
®
3333-8
N72= Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)
S
S
S
G
D
D
D
D
Pin 1
D
S
G
Equivalent Circuit
N72
YYWW
POWERDI is a registered trademark of Diodes Incorporated.
DMN7022LFG
Document number: DS37008 Rev. 1 - 2
2 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN7022LFG
ADVANCE INFORMATION
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
75 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
7.8
6.2
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
10.5
8.4
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
56 A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
2.1 A
Avalanche Current, L = 0.1mH
I
AS
28.8 A
Avalanche Energy, L = 0.1mH
E
AS
42.2 mJ
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
0.9
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θ
JA
125
°C/W
t<10s
67
Total Power Dissipation (Note 6)
P
D
2
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θ
JA
62
°C/W
t<10s
34
Thermal Resistance, Junction to Case (Note 6)
R
θ
JC
6.9
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
75 — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1 µA
V
DS
= 75V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
1 — 3 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS(ON)
— 14.6 22
m
V
GS
= 10V, I
D
= 7.2A
— 20.5 28
V
GS
= 4.5V, I
D
= 6.4A
Diode Forward Voltage
V
SD
— 0.72 — V
V
GS
= 0V, I
S
= 3.2A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
2737
pF
V
DS
= 35V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
126
pF
Reverse Transfer Capacitance
C
rss
96.1
pF
Gate Resistance
R
g
— 0.89 —
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 26.4 —
nC
V
DS
= 38V, I
D
= 7.2A
Total Gate Charge (V
GS
= 10V) Q
g
— 56.5 —
nC
Gate-Source Charge
Q
g
s
— 12 —
nC
Gate-Drain Charge
Q
g
d
— 11.8 —
nC
Turn-On Delay Time
t
D
on
6.1
— ns
V
GS
= 10V, V
DS
= 38V,
R
G
= 1, I
D
= 5.7A
Turn-On Rise Time
t
r
5.7
— ns
Turn-Off Delay Time
t
D
off
19.6
— ns
Turn-Off Fall Time
t
f
3.9
— ns
Body Diode Reverse Recovery Time
t
rr
26.2
ns
I
F
= 5.7A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
Q
rr
25.2
nC
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMN7022LFG
Document number: DS37008 Rev. 1 - 2
3 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN7022LFG
ADVANCE INFORMATION
NEW PRODUCT
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.0
5.0
10.0
15.0
20.0
25.0
30.0
012345
V= 3.5V
GS
V= 4.0V
GS
V= 6.0V
GS
V= 5.0V
GS
V= 4.5V
GS
V= 8.0V
GS
V = 10V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
1.5 2 2.5 3 3.5 4 4.5 5
V= 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
0 5 10 15 20 25 30
V = 4.5V
GS
V = 10V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0.01
0.012
0.014
0.016
0.018
0.02
0.022
0.024
0.026
0.028
2 4 6 8 10 12 14 16 18 20
I= 7.2A
D
I= 6.4A
D
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0 2 4 6 8 101214161820
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 10V
GS
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-50 -25 0 25 50 75 100 125 150
V = 4.5V
I = 6.4A
GS
D
V=V
I = 7.2A
GS
D
10

DMN7022LFG-7

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
MOSFET 75V N-Ch Enh FET 20Vgs 10.5A 2737pF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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