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BCX41TA
P1-P1
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 OCTOBER 1995
✪
PARTMARKING DETAIL EK
ABSOLUTE MAXIMUM
RATINGS.
PARAM
ETER
SYMBO
L
V
A
L
U
E
U
N
IT
Collec
tor-Em
itter Voltag
e
V
CES
125
V
Collec
tor-Em
itter Voltag
e
V
CEO
125
V
Em
itt
er-Base Voltage
V
EBO
5V
Peak Pulse Current
I
CM
1A
Continuous Coll
ector Curr
ent
I
C
800
m
A
Base
Cur
ren
t
I
B
100
m
A
Power Dissipat
ion at T
amb
=25°
C
P
TOT
330
m
W
Operati
ng and Stor
age Temperatur
e Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL
CHARACTERISTI
CS (a
t T
amb
= 25°C unless otherwise stated).
PARAM
ETER
SYMB
OL
MIN.
TYP.
MAX.
UNIT
COND
ITI
ONS.
Coll
ect
or
-Ba
se Cut
-Of
f
Current
I
CES
100
10
nA
µ
A
V
CE
=100V
V
CE
=100V, T
amb
=150°C
Co
llecto
r Cut-O
ff
Current
I
CEX
10
75
µ
A
µ
A
V
CE
=100V,V
BE
=0.2V,T
am
b
=85°
C
V
CE
=100V,V
BE
=0.
2V,
T
am
b
=125°C
Em
itter C
ut-O
ff
Current
I
EBO
100
nA
V
EB
=4V
Co
llector-E
mitter
Saturation
Voltage
V
CE(s
at
)
0.9
V
I
C
=300mA, I
B
=30mA *
Ba
se-E
m
itter
Saturation
Voltage
V
BE(s
at
)
1.4
V
I
C
=300
mA, I
B
=30mA
*
Stat
ic Forward
Current Tran
sfer Ratio
h
FE
25
63
40
I
C
=10
0µ
A, V
CE
=1V
I
C
=100
mA, V
CE
=1V *
I
C
=200
mA, V
CE
=1V *
Transit
ion Frequency
f
T
100
MHz
I
C
=10mA, V
CE
=5V
f =20MHz
Output Capacit
ance
C
obo
12
pF
V
CB
=10V, I
E
=I
e
=0,
f
=1MHz
* Measured und
er pul
sed condi
t
ions.
Puls
e widt
h = 300
µ
s. Duty c
ycle 2%
BCX41
1
3
2
3 - 33
P1-P1
BCX41TA
Mfr. #:
Buy BCX41TA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT General Purpose Transistor SOT23 T&R 3K
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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Ups
TNT
EMS
Payment:
T/T
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BCX41TA