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BF245B,126

P1-P3P4-P6P7-P9P10-P12P13-P13
1996 Jul 30 4
NXP Semiconductors Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
DYNAMIC CHARACTERISTICS
Common source; T
amb
=25C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
is
input capacitance V
DS
=20V; V
GS
= 1V; f=1MHz 4 pF
C
rs
reverse transfer capacitance V
DS
=20V; V
GS
= 1V; f=1MHz 1.1 pF
C
os
output capacitance V
DS
=20V; V
GS
= 1V; f=1MHz 1.6 pF
g
is
input conductance V
DS
=15V; V
GS
=0; f=200MHz 250 S
g
os
output conductance V
DS
=15V; V
GS
=0; f=200MHz 40 S
y
fs
forward transfer admittance V
DS
=15V; V
GS
=0; f=1kHz 3 6.5 mS
V
DS
=15V; V
GS
=0; f=200MHz 6 mS
y
rs
reverse transfer admittance V
DS
=15V; V
GS
=0; f=200MHz 1.4 mS
y
os
output admittance V
DS
=15V; V
GS
=0; f=1kHz 25 S
f
gfs
cut-off frequency V
DS
=15V; V
GS
=0; g
fs
= 0.7 of its
value at 1 kHz
700 MHz
Fnoise figure V
DS
=15V; V
GS
=0; f=100MHz;
R
G
=1k (common source);
input tuned to minimum noise
1.5 dB
handbook, halfpage
−10
−10
−3
−10
−2
−10
−1
−1
150500
MGE785
100
typ
T
j
(°C)
I
GSS
(nA)
Fig.2 Gate leakage current as a function of
junction temperature; typical values.
V
DS
=0; V
GS
= 20 V.
Fig.3 Transfer characteristics for BF245A;
typical values.
handbook, halfpage
V
GS
(V)
I
D
(mA)
6
0
−40−2
MGE789
5
4
3
2
1
V
DS
=15V; T
j
=25C.
1996 Jul 30 5
NXP Semiconductors Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
handbook, halfpage
V
DS
(V)
I
D
(mA)
6
0
02010
MBH555
5
4
3
2
1
V
GS
= 0 V
−0.5 V
−1 V
−1.5 V
Fig.4 Output characteristics for BF245A;
typical values.
V
DS
=15V; T
j
=25C.
Fig.5 Transfer characteristics for BF245B;
typical values.
V
DS
=15V; T
j
=25C.
handbook, halfpage
V
GS
(V)
I
D
(mA)
15
0
−40−2
MGE787
10
5
handbook, halfpage
V
DS
(V)
I
D
(mA)
15
0
02010
MBH553
10
5
V
GS
= 0 V
−0.5 V
−1 V
−1.5 V
−2 V
−2.5 V
Fig.6 Output characteristics for BF245B;
typical values.
V
DS
=15V; T
j
=25C.
Fig.7 Transfer characteristics for BF245C;
typical values.
handbook, halfpage
V
GS
(V)
I
D
(mA)
30
0
−10 0−5
MGE788
20
10
V
DS
=15V; T
j
=25C.
1996 Jul 30 6
NXP Semiconductors Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
handbook, halfpage
V
DS
(V)
I
D
(mA)
30
0
02010
MBH554
20
10
V
GS
= 0 V
−1 V
−2 V
−3 V
−4 V
Fig.8 Output characteristics for BF245C;
typical values.
V
DS
=15V; T
j
=25C.
Fig.9 Drain current as a function of junction
temperature; typical values for BF245A.
V
DS
=15V.
handbook, halfpage
0
0 50 150
T
j
(°C)
4
I
D
(mA)
3
1
2
MGE775
100
−0.5 V
V
GS
= 0 V
−1.5 V
−1 V
Fig.10 Drain current as a function of junction
temperature; typical values for BF245B.
handbook, halfpage
0
0 50 150
15
5
10
MGE776
100
T
j
(°C)
I
D
(mA)
V
GS
= 0 V
−2 V
−1 V
V
DS
=15V.
Fig.11 Drain current as a function of junction
temperature; typical values for BF245C.
V
DS
=15V.
handbook, halfpage
0 50 150
20
0
MGE779
100
4
8
12
16
T
j
(°C)
I
D
(mA)
V
GS
= 0 V
−4 V
−2 V
P1-P3P4-P6P7-P9P10-P12P13-P13

BF245B,126

Mfr. #:
Buy BF245B,126
Manufacturer:
NXP Semiconductors
Description:
RF JFET Transistors AMMORA FET-RFSS
Lifecycle:
New from this manufacturer.
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