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ALM-2412-TR1G

P1-P3P4-P6P7-P9P10-P12P13-P13
ALM-2412
GPS LNA-Filter Front-End Module
Data Sheet
Attention: Observe precautions for
handling electrostatic sensitive devices.
For RF_IN (Pin 1): ESD Human Body Model = 3 kV
All other pins: ESD Machine Model = 40 V
ESD Human Body Model = 300 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Description
Avago Technologies’ ALM-2412 is an LNA module, with
integrated  lter, designed for GPS band applications at
1.575GHz. The LNA uses Avago Technologies’ proprietary
GaAs Enhancement-mode pHEMT process to achieve high
gain with very low noise  gure and high linearity. Noise
gure distribution is very tightly controlled. A CMOS-com-
patible shutdown pin is included either for turning the
LNA on/o , or for current adjustment. The integrated  lter
utilizes an Avago Technologies’ leading-edge FBAR  lter
for exceptional rejection at Cell/PCS-Band frequencies.
The ALM-2412 is useable down to 1V operation. It achieves
low noise  gure, high gain and linearity even at 1V, making
it suitable for use in critical low-power GPS applications or
during low-battery situations.
Component Image
Surface Mount 3.3x2.1x1.1 mm
3
12-lead MCOB
Features
Very Low Noise Figure : 0.85 dB typical
High Gain : 13.5 dB typical
High IIP3 and IP1dB
Exceptional Cell/PCS-Band rejection
Advanced GaAs E-pHEMT Technology
Low external component count
Wide Supply Voltage : 1V to 3.6V
Shutdown current : < 0.1uA
CMOS compatible shutdown pin (SD) current @ 2.8V :
0.1mA
Adjustable current via single external resistor/voltage
Meets MSL3, Lead-Free and Halogen-Free
ESD-protected RF input: 3kV HBM
Small package dimension: 3.3(L)x2.1(W)x1.1(H) mm
3
Speci cations (Typical performance at 25°C)
At 1.575GHz, Vdd = 2.85V, Idd = 9.0mA
Gain = 13.5 dB
NF = 0.85 dB
IIP3 = +6.1 dBm, IP1dB = +2.2 dBm
S11 = -8.4 dB, S22 =-9.0 dB
Cell-Band Rejection: 53dBc
PCS-Band Rejection: 65dBc
At 1.575GHz, 1.0V supply
S21 = 7.2dB
NF = 1.63dB
Idd = 1.5mA
Application
GPS Band LNA
Note:
Package marking provides orientation and identi cation
“2412” = Product Code
First “X” = Year of manufacture
Second “X” = Work week of manufacture
Third “X” = Datecode
Fourth & Fifth “X” = Lot Number
TOP VIEW
BOTTOM VIEW
RF_IN 1
Gnd 2
SD 3
9 Gnd
8 FILTER-OUT
7 Gnd
Gnd 9
FILTER-OUT 8
Gnd 7
1 RF_IN
2 Gnd
3 SD
Gnd 4
Gnd 5
Gnd 6
12 VDD
11 Gnd
10 Gnd
Gnd 6
Gnd 5
Gnd 4
10 Gnd
11 Gnd
12 VDD
2412
XXXXX
2
Absolute Maximum Rating
[1]
T
A
=25°C
Symbol Parameter Units Absolute Max.
Vdd Device Drain to Source Voltage
[2]
V 3.6
Idd Drain Current
[2]
mA 20
P
in,max
CW RF Input Power
(Vdd = 2.85V, Idd=9.0mA)
dBm 15
P
diss
Total Power Dissipation
[4]
mW 72
T
j
Junction Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
T Recommended Operating Temperature °C -40 to 85
Thermal Resistance
Thermal Resistance
[3]
(V
dd
= 2.85 V, Idd = 9.0 mA),
jc
= 352.2°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Assuming DC quiescent conditions
3. Thermal resistance measured using Infra-Red
measurement technique.
4. Board (module belly) temperature T
B
is 25°C.
Derate 2.84 mW/°C for T
B
>125°C.
Electrical Speci cations
T
A
= 25°C, Vdd = +2.85V, Vsd = +2.6V, Idd = 9.0mA (typ), R2 = 10 k, Freq = 1.575GHz – Typical Performance
[8]
unless
otherwise speci ed.
Table 1. Performance table at nominal operating conditions
Symbol Parameter and Test Condition Units Min. Typ Max.
G Gain dB 11 13.5 -
NF
[7]
Noise Figure dB - 0.85 1.20
IP1dB Input 1dB Compressed Power dBm - 2.2 -
IIP3
[9]
Input 3
rd
Order Intercept Point (2-tone @ Fc +/- 2.5MHz) dBm - 6.1 -
S11 Input Return Loss dB - -8.4 -
S22 Output Return Loss dB - -9.0 -
S12 Reverse Isolation dB - -21.6 -
Cell Band Rejection Relative to 1.575GHz @ 827.5MHz dBc 45 53 -
PCS Band Rejection Relative to 1.575GHz @ 1885MHz dBc 45 65 -
Idd Supply DC current at Shutdown (SD) voltage Vsd = 2.6V mA - 9.0 15.0
Ish Shutdown Current @ VSD = 0V uA - 0.1 -
T
A
= 25°C, Vdd = +2.85V, Vsd = +1.8V, Idd = 3.2mA (typ), R2 = 10 k, Freq = 1.575GHz – Typical Performance
[8]
unless
otherwise speci ed.
Table 2. Typical performance at Vdd = +2.85V, Vsd = +1.8V, Idd = 3.2mA (typ)
Symbol Parameter and Test Condition Units Typ
G Gain dB 11.5
NF
[7]
Noise Figure dB 1.1
IP1dB Input 1dB Compressed Power dBm 4.4
IIP3
[9]
Input 3
rd
Order Intercept Point (2-tone @ Fc +/- 2.5MHz) dBm 5.3
S11 Input Return Loss dB -6.8
S22 Output Return Loss dB -8.6
S12 Reverse Isolation dB -20.4
Cell Band Rejection Relative to 1.575GHz @ 827.5MHz dBc 56
PCS Band Rejection Relative to 1.575GHz @ 1885MHz dBc 62
Idd Supply DC current at Shutdown (SD) voltage Vsd = 1.8V mA 3.2
Ish Shutdown Current @ VSD = 0V uA 0.1
3
Vdd = +2V, Vdd = +1.5V, Vdd = +1V, Freq = 1.575GHz – Typical Performance
[8]
(Vsd = Vdd, R2 = 0 ohms)
Table 3. Typical performance at low operating voltages with R2 (see Figures 6 and 7) set to 0 ohms
Symbol Parameter and Test Condition Units Vdd = 2V Vdd = 1.5V Vdd = 1V
G Gain dB 12.6 11 7.2
NF
[7]
Noise Figure dB 0.8 1 1.6
IP1dB Input 1dB Compressed Power dBm -0.7 -1.6 -0.7
IIP3
[9]
Input 3
rd
Order Intercept Point (2-tone @ Fc +/- 2.5MHz) dBm 6 4.3 3
S11 Input Return Loss dB -8.2 -7.4 -5.2
S22 Output Return Loss dB -12.9 -11 -7
S12 Reverse Isolation dB -21.6 -20.1 -16.9
Cell Band Rejection Relative to 1.575GHz @ 827.5MHz dBc 54.7 55.7 57.6
PCS Band Rejection Relative to 1.575GHz @ 1885MHz dBc 63.7 62.9 61.9
Idd Supply DC current mA 7.7 4.1 1.3
Ish Shutdown Current @ VSD = 0V uA 0.1 0.1 0.1
Notes:
7. For noise  gure measurement, input board loss has not been deducted
8. Measurements at 1.575GHz obtained using demo board described in Figures 6 and 7
9. 1.575GHz IIP3 test condition: F
RF1
= 1572.5 MHz, F
RF2
= 1577.5 MHz with input power of -20dBm per tone measured at the worst case side band
P1-P3P4-P6P7-P9P10-P12P13-P13

ALM-2412-TR1G

Mfr. #:
Buy ALM-2412-TR1G
Manufacturer:
Broadcom / Avago
Description:
RF Front End GPS LNA with Filter
Lifecycle:
New from this manufacturer.
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