LTC1155
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APPLICATIONS INFORMATION
For this example, we assume a worst-case scenario; i.e.,
that the power supply to the power MOSFET ishard” and
provides a constant 5V regardless of the current. In this
case, the current is limited by the R
DS(ON)
of the MOSFET
and the drain sense resistance. Therefore:
I
PEAK
= V
SUPPLY
/0.08Ω
= 62.5A
The drop across the drain sense resistor under these
conditions is much larger than 100mV and is equal to the
drain current times the sense resistance:
V
DROP
= (I
PEAK
)(R
SEN
)
= 1.88V
By consulting the power MOSFET data sheet SOA graph,
we note that the IRLZ34 is capable of delivering 62.5A at a
drain-to-source voltage of 3.12V for approximately 10ms.
An RC time constant can now be calculated which satisfies
this requirement:
RC =
t
In 1
V
SEN
R
SEN
I
MAX
RC =
0.01
In 1
0.10
0.030 62.5
= 0.01/– 0.054
= 182ms
This time constant should be viewed as a maximum
safe delay time and should be reduced if the competing
requirement of starting a high inrush current load is less
stringent; i.e., if the inrush time period is calculated at
20ms, the RC time constant should be set at roughly two
or three times this time period and not at the maximum
of 182ms. A 60ms
time constant would be produced
with a 270k resistor and a 0.22µF capacitor (as shown in
Figure 1).
Graphical Approach to Selecting R
D LY
and C
D LY
Figure 2 is a graph of normalized overcurrent shutdown
time versus normalized MOSFET current. This graph can
be used instead of the above equation to calculate the RC
time constant. The Y axis of the graph is normalized to
one RC time constant.
The X axis is normalized to the set
current. (The set current is defined as the current required
to develop 100mV across the drain sense resistor).
MOSFET CURRENT (1 = SET CURRENT)
1
0.01
OVERCURRENT SHUTDOWN TIME (1= RC)
0.1
1
10
5 10 20 100
1155 F02
2 50
Figure 2. Shutdown Time vs MOSFET Current
Note that the shutdown time is shorter for increasing
levels of MOSFET current. This ensures that the total
energy dissipated by the MOSFET is always within the
bounds established by the MOSFET manufacturer for
safe operation.
In the example presented above, we established that the
power MOSFET should not be allowed to pass 62.5A for
more than 10ms. 62.5A is roughly 18 times
the set cur-
rent of 3.3A. By drawing a line up from 18 and reflecting
it off the curve, we establish that the RC time constant
should be set at 10ms divided by 0.054, or 180ms. Both
methods result in the same conclusion.
Using a Speed Up Diode
A way to further reduce the amount of time that the power
MOSFET is in a short-circuit condition is to
bypass”the
delay resistor with a small signal diode as shown in Fig-
ure3. The diode will engage when the drop across the
drain sense resistor exceeds 0.7V, providing a direct path
LTC1155
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APPLICATIONS INFORMATION
to the sense pin and dramatically reducing the amount of
time the MOSFET is in an overload condition. The drain
sense resistor value is selected to limit the maximum DC
current to 4A. Above 28A, the delay time drops to 10µs.
Switched Supply Applications
Large inductive loads, such as solenoids, relays and mo-
tors store energy which must be directed back to either
the power supply
or to ground when the supply voltage is
interrupted (see Figure 4). In normal operation, when the
switch is turned OFF, the energy stored in the inductor is
harmlessly absorbed by the MOSFET; i.e., the current flows
out of the supply through the MOSFET until the inductor
current falls to zero.
IRLZ34
LOAD
LTC1155
GND
GND
G1
DS1
V
S
IN1
V
S
= 5.0V
C
DLY
0.22µF
R
SEN
0.025Ω
R
DLY
270k
D1
1N4148
Figure 4. Switched Supply
Figure 3. Using a Speed-Up Diode
1155 F04
IRLZ34
L
LOAD
LTC1155
GND
GND
G1
DS1
V
S
IN1
C
DLY
R
SEN
0.025Ω
R
DLY
C
S
+
+
If the MOSFET is turned ON and the power supply (battery)
removed, the inductor current is delivered by the supply
capacitor. The supply capacitor must be large enough to
deliver the energy demanded by the discharging inductor.
If the storage capacitor is too small, the supply lead of
the LTC1155 may be pulled below ground, permanently
destroying the device.
Consider the case of a load inductance
of 1mH which
is supporting 3A when the 6V power supply connection
is interrupted. A supply capacitor of at least 250µF is
required to prevent the supply lead of the LTC1155 from
being pulled below ground (along with any other circuitry
tied to the supply).
Any wire between the power MOSFET source and the load
will add a small amount of parasitic inductance in series
with
the load (approximately 0.4µH/foot). Bypass the power
supply lead of the LTC1155 with a minimum of 10µF to
ensure that this parasitic load inductance is discharged
safely, even if the load is otherwise resistive.
Large Inductive Loads
Large inductive loads (>0.1mH) may require diodes con-
nected directly across the inductor to safely divert the
stored energy to ground. Many inductive loads have these
diodes included. If
not, a diode of the proper current rat-
ing should be connected across the load to safely divert
the stored energy.
Reverse-Battery Protection
The LTC1155 can be protected against reverse-battery
conditions by connecting a resistor in series with the
ground lead as shown in Figure 5. The resistor limits the
supply current to less than 50mA with –12V applied. Since
the LTC1155 draws very little current
while in normal
operation, the drop across the ground resistor is minimal.
The TTL or CMOS driving logic is protected against
reverse-battery conditions by the 100k input current
limiting resistor. The addition of 100k resistance in series
with the input pin will not affect the turn ON and turn OFF
times which are dominated by the controlled gate charge
and discharge periods.
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APPLICATIONS INFORMATION
TYPICAL APPLICATIONS
Overvoltage Protection
The MOSFET and load can be protected against overvolt-
age conditions by using the circuit of Figure 6. The drain
sense function is used to detect an overvoltage condition
and quickly discharge the power MOSFET gate. The 18V
zener diode conducts when the supply voltage exceeds
1155 F05
LOAD
LTC1155
GND
GND
G1
DS1
V
S
IN1
V
S
= 4.5V TO 18V
C
DLY
R
SEN
R
DLY
100k
5V
300Ω
1/4W
10µF
25V
+
Dual 2A Autoreset Electronic Fuse
Figure 5. Reverse Battery Protection
Figure 6. Overvoltage Shutdown and Protection
18.6V and pulls the drain sense pin 0.6V below the sup-
ply pin voltage.
The supply voltage is limited to 18.6V and the gate drive is
immediately removed from the MOSFET to ensure that it
cannot conduct during the overvoltage period. The gate of
the MOSFET will be latched OFF until the supply transient
is
removed and the input turned OFF and ON again.
1155 F06
LOAD
LTC1155
GND
GND
G1
DS1
V
S
IN1
V
S
= 4.5V TO 18V
510Ω
10k 1N4148
18V
1155 TA03
0.03Ω
10µF
1/2 SI9956DY
30k
LTC1155
GND
IN1
IN2
DS2V
S
DS1
0.03Ω
G2
G1
0.1µF
30k
0.1µF
5V
100k
1/2 SI9956DY
1N4148
1N4148
OUT 1 OUT 2
100k
750k
1.0µF
LMC555
6
1
2
3
8 4
f
O
= 1Hz
ALL COMPONENTS SHOWN ARE SURFACE MOUNT
+

LTC1155CS8#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Gate Drivers 2x Hi Side uP MOSFET Drvr
Lifecycle:
New from this manufacturer.
Delivery:
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