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NTJD4001NT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 7
1 Publication Order Number:
NTJD4001N/D
NTJD4001N, NVTJD4001N
Small Signal MOSFET
30 V, 250 mA, Dual N−Channel, SC−88
Features
• Low Gate Charge for Fast Switching
• Small Footprint − 30% Smaller than TSOP−6
• ESD Protected Gate
• AEC Q101 Qualified − NVTJD4001N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Low Side Load Switch
• Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC
• Buck Converters
• Level Shifts
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current (Note 1)
Stead
y
State
T
A
= 25 °C
I
D
250
mA
T
A
= 85 °C 180
Power Dissipation
(Note 1)
Steady
State
T
A
= 25 °C P
D
272 mW
Pulsed Drain Current
t =10 ms
I
DM
600 mA
Operating Junction and Storage Temperature T
J
, T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
250 mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Ambient − Steady State
R
q
JA
458
°C/W
Junction−to−Lead − Steady State
R
q
JL
252
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using min pad size
(Cu area = 0.155 in sq [1 oz] including traces).
SOT−363
CASE 419B
STYLE 26
MARKING DIAGRAM &
PIN ASSIGNMENT
www.onsemi.com
TE M G
G
1
6
1
TE = Device Code
M = Date Code
G = Pb−Free Package
D1 G2 S2
S1 G1 D2
(Note: Microdot may be in either location)
V
(BR)DSS
R
DS(on)
TYP I
D
Max
30 V
1.0 W @ 4.0 V
1.5 W @ 2.5 V
250 mA
Device Package Shipping
†
ORDERING INFORMATION
NTJD4001NT1G SOT−363
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Top View
SOT−363
SC−88 (6 LEADS)
D
1
G
2
S
2
S
1
G
1
6
5
4
1
2
3
D
2
NVTJD4001NT1G SOT−363
(Pb−Free)
3000 / Tape &
Reel
NTJD4001N, NVTJD4001N
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 100 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
56 mV/ °C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 30 V 1.0
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±10 V ±1.0
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 100 mA
0.8 1.2 1.5 V
Gate Threshold Temperature
Coefficient
V
GS(TH)
/T
J
−3.2 mV/ °C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 4.0 V, I
D
= 10 mA 1.0 1.5 W
V
GS
= 2.5 V, I
D
= 10 mA 1.5 2.5
Forward Transconductance g
FS
V
DS
= 3.0 V, I
D
= 10 mA 80 mS
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 5.0 V
20 33
pF
Output Capacitance C
OSS
19 32
Reverse Transfer Capacitance C
RSS
7.25 12
Total Gate Charge Q
G(TOT)
V
GS
= 5.0 V, V
DS
= 24 V,
I
D
= 0.1 A
0.9 1.3
nC
Threshold Gate Charge Q
G(TH)
0.2
Gate−to−Source Charge Q
GS
0.3
Gate−to−Drain Charge Q
GD
0.2
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
td
(ON)
V
GS
= 4.5 V, V
DD
= 5.0 V,
I
D
= 10 mA, R
G
= 50 W
17
ns
Rise Time tr 23
Turn−Off Delay Time td
(OFF)
94
Fall Time tf 82
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 mA
T
J
= 25°C 0.65 0.7
V
T
J
= 125°C 0.45
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 8.0 A/ms,
I
S
= 10 mA
12.4 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTJD4001N, NVTJD4001N
www.onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
0
0.2
0.1
1.20.4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
0.06
0.02
0
Figure 1. On−Region Characteristics
1.2 21.6 2.
2
0.1
0.06
0.02
1.4
0
1
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.5
0.25
Figure 3. On−Resistance vs. Drain Current and
Temperature
I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−50 0−25 25
1.4
1.2
1
0.8
0
50 125100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
1.25
T
J
= −55°C
T
J
= 125°C
75 150
I
D
= 0.01 A
V
GS
= 10 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
0.8
25°C
2
1.5 V
0.005
0.205
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
1.75 V
2 V
2.5 V
21.6
V
DS
= 5 V
0.75
V
GS
= 2.75 V
V
GS
= 10 V to 3 V
0.04
0.08
0.12
0.08
0.04
1.8
T
J
= 125°C
V
GS
= 10 V
T
J
= −55°C
T
J
= 25°C
1.0
1.8
1.6
03
0
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10000
10
I
DSS
, LEAKAGE (nA)
1000
100
10
15
T
J
= 150°C
T
J
= 125°C
5
V
GS
= 0 V
0.055 0.105 0.155
0.5
0.25
I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1.25
0.005
0.20
5
0.75
V
GS
= 10 V
T
J
= 25°C
1.0
0.055 0.105 0.155
V
GS
= 4.5 V
0.6
0.4
0.2
20
25
0.18
0.16
0.14
2.25 V
P1-P3P4-P5

NTJD4001NT1G

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Manufacturer:
ON Semiconductor
Description:
MOSFET 30V 250mA Dual N-Channel
Lifecycle:
New from this manufacturer.
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