SGL60N90DG3 Rev. A1
SGL60N90DG3
©2002 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
Fig 8. Switching Characteristics vs.
Gate Resistance
Fig 9. Switching Characteristics vs.
Collector Current
Fig 10. Gate Charge Characteristics
Fig 11. SOA Characteristics
0 50 100 150 200
10
100
1000
10000
V
CC
= 600V
I
C
= 60A
V
GE
=
±
15V
T
C
= 25
℃
Tdoff
Tf
Tdon
Tr
Switching Time [ns]
Gate Resistance, R
G
[
Ω
]
0.1 1 10
100
1000
10000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
℃
Cres
Coes
Cies
Capacitance [pF]
Collector-Emitter Voltage, V
CE
[V]
10 20 30 40 50 60
100
1000
V
CC
= 600V
R
G
= 51
Ω
V
GE
=
±
15V
T
C
= 25
℃
Tdoff
Tf
Tdon
Tr
Swing Time [ns]
Collector Current, I
C
[A]
0 100 200 300
0
3
6
9
12
15
Common Emitter
V
CC
= 600V, R
L
= 10
Ω
T
C
= 25
℃
Gate-Emitter Voltage, V
GE
[V]
Gate Charge, Q
g
[nC]
1 10 100 1000
0.1
1
10
100
Single Nonrepetitive Pulse
T
C
= 25
℃
Curve must be darated
linearly with increase
in temperature
10us
100us
1ms
10ms
DC Operation
I
C
MAX. (Pulsed)
I
C
MAX. (Continuous)
Collector Current , I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
10
0.1
0.5
0.2
0.05
0.02
0.01
single pulse
Thermal Response, Zthjc [
o
C/W]
Rectangular Pulse Duration [sec]
Fig 12. Transient Thermal Impedance of IGBT
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
