©2002 Fairchild Semiconductor Corporation SGL60N90DG3 Rev. A1
IGBT
SGL60N90DG3
SGL60N90DG3
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for induction heating applications.
Features
• High speed switching
• Low saturation voltage : V
CE(sat)
= 2.0 V @ I
C
= 60A
• High input impedance
• Built-in fast recovery diode
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description SGL60N90DG3 Units
V
CES
Collector-Emitter Voltage 900 V
V
GES
Gate-Emitter Voltage ± 25 V
I
C
Collector Current @ T
C
= 25°C60 A
Collector Current @ T
C
= 100°C42 A
I
CM (1)
Pulsed Collector Current 120 A
I
F
Diode Continuous Forward Current @ T
C
= 100°C15 A
P
D
M a x i m u m P o w e r D i s s i p a t i o n @ T
C
= 25°C 180 W
Maximum Power Dissipation @ T
C
= 100°C72 W
T
J
Operating Junction Temperature -55 to +150 °C
T
stg
Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
300 °C
Symbol Parameter Typ. Max. Units
R
θJC
(IGBT) Thermal Resistance, Junction-to-Case -- 0.69 °C/W
R
θJC
(DIODE) Thermal Resistance, Junction-to-Case -- 2.08 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 25 °C/W
Applications
Home appliances, induction heaters, induction heating JARs, and microwave ovens.
G
C
E
TO-264
G
C
E
G
C
E
