OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MPSA75RLRAG

P1-P3P4-P4
www.DataSheet4U.com
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1 Publication Order Number:
MPSA75/D
MPSA75, MPSA77
Darlington Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage MPSA75
MPSA77
V
CES
−40
−60
Vdc
Emitter−Base Voltage V
EBO
−10 Vdc
Collector Current − Continuous I
C
−500 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
JA
200 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MPSA77 TO−92 5,000 Units/Box
MPSA77G TO−92
(Pb−Free)
5,000 Units/Box
MPSA75RLRP TO−92 2,000/Ammo Pack
MPSA75RLRPG TO−92
(Pb−Free)
2,000/Ammo Pack
Device Package Shipping
†
MPSA75RLRA TO−92 2,000/Tape & Ree
l
MPSA75RLRAG TO−92
(Pb−Free)
2,000/Tape & Ree
l
MPSA77RLRA TO−92 2,000/Ammo Pack
MPSA77RLRAG TO−92
(Pb−Free)
2,000/Ammo Pack
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specificatio
n
Brochure, BRD8011/D.
COLLECTOR 3
BASE
2
EMITTER 1
MPSAxx = Device Code
xx = 75 or 77
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
TO−92
CASE 29−11
STYLE 1
1
2
3
MARKING
DIAGRAM
MPS
Axx
AYWW G
G
MPSA75, MPSA77
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage MPSA75
(I
C
= −100 Adc, V
BE
= 0) MPSA77
V
(BR)CES
−40
−60
−
−
−
−
Vdc
Collector−Base Breakdown Voltage MPSA75
(I
C
= 100 Adc, I
E
= 0) MPSA77
V
(BR)CBO
−40
−60
−
−
−
−
Vdc
Collector Cutoff Current
(V
CB
= −30 V, I
E
= 0) MPSA75
(V
CB
= −50 V, I
E
= 0) MPSA77
I
CBO
−
−
−
−
−100
−100
nAdc
Collector Cutoff Current
(V
CE
= −30 V, V
BE
= 0) MPSA75
(V
CE
= −50 V, V
BE
= 0) MPSA77
I
CES
−
−
−
−
−500
−500
nAdc
Emitter Cutoff Current
(V
EB
= −10 Vdc)
I
EBO
− − −100 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10 mA, V
CE
= −5.0 V)
(I
C
= −100 mA, V
CE
= −5.0 V)
h
FE
10,000
10,000
−
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= −100 mA, I
B
= −0.1 mAdc)
V
CE(sat)
− − −1.5 Vdc
Base−Emitter On Voltage
(I
C
= −100 mA, V
CE
= −5.0 Vdc)
V
BE
− − −2.0 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − High Frequency
(I
C
= −10 mA, V
CE
= −5.0 V, f = 100 MHz)
|h
fe
| 1.25 2.4 − −
MPSA75, MPSA77
http://onsemi.com
3
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
200
−1.0
2.0
h
FE
, DC CURRENT GAIN (X1.0 K)
T
A
= 125°C
25°C
−55°C
V
CE
= −2.0 V
−2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −100 −300
100
70
50
30
20
10
7.0
5.0
3.0
−0.3 −0.5 −0.7 −70 −200
−5.0 V
−10 V
I
C
, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
V, VOLTAGE (VOLTS)
−2.0
0
−0.3
T
A
= 25°C
V
BE(on)
@ V
CE
= −5.0 V
−1.6
−1.2
−0.8
−0.4
V
CE(sat)
@ I
C
/I
B
= 1000
I
C
/I
B
= 100
−0.5 −1.0 −2 −3 −5 −10 −20 −30 −50 −100 −200 −300
I
B
, BASE CURRENT (A)
Figure 3. Collector Saturation Region
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLT
S
−2.0
−0.6
T
A
= 25°C
I
C
=
−1.8
−1.6
−1.4
−1.2
−1.0
−0.8
−0.1−0.2 −1 −2 −5 −10 −20 −50 −100−200−500−0.5 −1K−2K −10K
−10 mA −50 mA −100 mA −175 mA −300 mA
10
4.0
3.0
2.0
0.1
Figure 4. High Frequency Current Gain
I
C
, COLLECTOR CURRENT (mA)
V
CE
= −5.0 V
f = 100 MHz
T
A
= 25°C
|h
FE
|, HIGH FREQUENCY CURRENT GAIN
1.0
0.4
0.2
−1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500 −1K
V
CE
, COLLECTOR VOLTAGE (VOLTS)
−6.0
I
C
, COLLECTOR CURRENT (mA)
−10 −20
Figure 5. Active Region, Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−300
−200
−100
−50
−20
−10
−40 −60
100 s
1.0 ms
T
A
= 25°C
−1000
(DUTY CYCLE ≤ 10%)
1.0 s
T
C
= 25°C
MPSA75
−1.0 −2.0 −4.0
MPSA77
V
BE(sat)
@ I
C
/I
B
= 100
−5K
P1-P3P4-P4

MPSA75RLRAG

Mfr. #:
Buy MPSA75RLRAG
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 500mA 40V PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet