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MBRB16H60HE3_A/I

P1-P3P4-P4
MBRB16H35, MBRB16H45, MBRB16H60
www.vishay.com
Vishay General Semiconductor
Revision: 13-Jun-2018
1
Document Number: 88784
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
DESIGN SUPPORT TOOLS
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case: D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: as marked
PRIMARY CHARACTERISTICS
I
F(AV)
16 A
V
RRM
35 V, 45 V, 60 V
I
FSM
150 A
V
F
0.56 V, 0.62 V
I
R
100 μA
T
J
max. 175 °C
Package D
2
PAK (TO-263AB)
Circuit configuration Single
D
2
PAK (TO-263AB)
PIN 1
PIN 2
K
HEATSINK
1
2
K
MBRB16HXX
click logo to get started
Available
Models
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBRB16H35 MBRB16H45 MBRB16H60 UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 60
VWorking peak reverse voltage V
RWM
35 45 60
Maximum DC blocking voltage V
DC
35 45 60
Maximum average forward rectified current (fig. 1) I
F(AV)
16 A
Non-repetitive avalanche energy
at 25 °C, I
AS
= 4 A, L = 10 mH
E
AS
80 mJ
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
150
A
Peak repetitive reverse surge current at t
p
= 2.0 μs, 1 kHz I
RRM
1.0 1.0 0.5
Peak non-repetitive reverse energy (8/20 μs waveform) E
RSM
20 mJ
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
V
C
25 kV
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-65 to +175 °C
MBRB16H35, MBRB16H45, MBRB16H60
www.vishay.com
Vishay General Semiconductor
Revision: 13-Jun-2018
2
Document Number: 88784
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width 40 ms
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
MBRB16H35, MBRB16H45 MBRB16H60
UNIT
TYP. MAX. TYP. MAX.
Maximum instantaneous forward voltage V
F
(1)
I
F
= 16 A T
J
= 25 °C - 0.66 - 0.73
V
I
F
= 16 A T
J
= 125 °C 0.52 0.56 0.58 0.62
Maximum reverse current I
R
(2)
Rated V
R
T
J
= 25 °C - 100 - 100 μA
T
J
= 125 °C 6.0 20 4.0 20 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBRB16H35, MBRB16H45, MBRB16H60 UNIT
Typical thermal resistance, junction to case R
JC
1.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-263AB MBRB16H60HE3_A/P
(1)
1.33 P 50/tube Tube
TO-263AB MBRB16H60HE3_A/I
(1)
1.33 I 800/reel Tape and reel
0
5
10
15
20
250 50 75 100 125 150 175
Average Forward Current (A)
Case Temperature (°C)
1 10 100
0
25
50
75
100
125
150
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
MBRB16H35, MBRB16H45, MBRB16H60
www.vishay.com
Vishay General Semiconductor
Revision: 13-Jun-2018
3
Document Number: 88784
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.01
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
10
100
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
MBRB16H35, MBRB16H45
MBRB16H60
Instantaneous Forward Voltage (V)
)A( tn
e
rruC
drawroF s
uoenat
n
a
t
snI
0.0001
0.001
0.1
0.01
1
10
100
MBRB16H35, MBRB16H45
MBRB16H60
0 20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
ka
eL esre
veR s
u
oen
at
natsnIega
)
Am( tn
e
rruC
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1 1
100
10
1000
100
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
MBRB16H35, MBRB16H45
MBRB16H60
Reverse Voltage (V)
)F
p( ec
nat
ica
paC n
oit
c
nuJ
0.01 0.1
0.1
1
1
10
10
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
D
2
PAK (TO-263AB)
Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.15 (3.81) min.
0.33 (8.38) min.
0.42 (10.66) min.
12
K
K
0.140 (3.56)
0.110 (2.79)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.090 (2.29)
0 to 0.01 (0 to 0.254)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.360 (9.14)
0.320 (8.13)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
P1-P3P4-P4

MBRB16H60HE3_A/I

Mfr. #:
Buy MBRB16H60HE3_A/I
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 16A,60V,TO-263AB AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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