IXZR16N60 Datasheet IXZR16N60 | P1-P3

IXZR16N60 & IXZR16N60A/B

Z-MOS RF Power MOSFET

V

DSS

= 600 V

I

D25

= 18 A

R

DS(on)

≤

0.56 Ω

ΩΩ

Ω

P

DC

= 350

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C

600 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MΩ

600 V

V

GS

Continuous

±20 V

V

GSM

Transient

±30 V

I

D25

T

c

= 25°C

18 A

I

DM

T

c

= 25°C, pulse width limited by T

JM

90 A

I

AR

T

c

= 25°C

18 A

E

AR

T

c

= 25°C

TBD mJ

dv/dt

I

S

≤ I

DM

, di/dt ≤ 100A/µs, V

DD

≤ V

DSS

,

T

j

≤ 150°C, R

G

= 0.2Ω

5 V/ns

I

S

= 0

>200 V/ns

P

DC

350 W

P

DHS

T

c

= 25°C, Derate 4.4W/°C above 25°C

TBD W

P

DAMB

T

c

= 25°C

3.0 W

R

thJC

TBD C/W

R

thJHS

TBD C/W

Symbol Test Conditions Characteristic Values

(

T

J

= 25°C unless otherwise specified

)

min. typ. max.

V

DSS

V

GS

= 0 V, I

D

= 4 ma

600 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250µΑ

4.6 V

I

GSS

V

GS

= ±20 V

DC

, V

DS

= 0

±100 nA

R

DS(on)

V

GS

= 20 V, I

D

= 0.5I

D25

Pulse test, t ≤ 300µS, duty cycle d ≤ 2%

0.53

Ω

g

fs

V

DS

= 50V, I

D

= 0.5I

D25

, pulse test

6.4 S

T

J

-55 +175 °C

T

JM

175 °C

T

stg

-55 + 175 °C

T

L

1.6mm(0.063 in) from case for 10 s

300 °C

Weight

3.5 g

I

DSS

V

DS

= 0.8V

DSS

T

J

= 25C

V

GS

=0 T

J

=125C

50

1

µA

mA

Features

•

Isolated Substrate

−

high isolation voltage (>2500V)

−

excellent thermal transfer

−

Increased temperature and power

cycling capability

•

IXYS advanced Z-MOS process

•

Low gate charge and capacitances

−

easier to drive

−

faster switching

•

Low R

DS(on)

•

Very low insertion inductance (<2nH)

•

No beryllium oxide (BeO) or other

hazardous materials

Advantages

•

High Performance RF Z-MOS

TM

•

Optimized for RF and high speed

•

Common Source RF Package

A = Gate Source Drain

B = Drain Source Gate

•

Isolated Package, no insulator

required

NChannel Enhancement Mode

Low

Q

g

and

R

g

High dv/dt

Nanosecond Switching

N-Channel Enhancement Mode Switch Mode RF MOSFET

Low Capacitance Z-MOS

TM

MOSFET Process

Optimized for RF Operation

Ideal for Class C, D, & E Applications

6

0

=

G

D

S

6

0

A

=

G

S

D

6

0

B

=

D

S

G

IXZR16N60 & IXZR16N60A/B

Z-MOS RF Power MOSFET

Characteristic Values

(

T

J

= 25°C unless otherwise specified

)

Symbol Test Conditions min. typ. max.

I

S

V

GS

= 0 V

18

Α

I

SM

Repetitive; pulse width limited by T

JM

108 A

V

SD

I

F

=

I

s,

V

GS

=0 V, Pulse test, t ≤ 300µs, duty cycle

≤2%

1.5 V

T

rr

200 ns

Source-Drain Diode

IXYS RF reserves the right to change limits, test conditions and dimensions.

IXYS RF MOSFETS are covered by one or more of the following U.S. patents:

4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508

5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715

5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585

6,731,002

CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.

Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-

lished in this document at any time and without notice.

Symbol Test Conditions Characteristic Values

(

T

J

= 25°C unless otherwise specified

)

min. typ. max.

R

G

1

Ω

C

iss

2040 pF

C

oss

V

GS

= 0 V, V

DS

= 0.8 V

DSS(max)

,

f = 1 MHz

160 pF

C

rss

20 pF

T

d(on)

4 ns

T

on

V

GS

= 15 V, V

DS

= 0.8 V

DSS

I

D

= 0.5 I

DM

R

G

= 1 Ω (External)

4 ns

T

d(off)

4 ns

T

off

6 ns

Q

g(on)

42 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

I

D

= 0.5 I

D25

I

G

= 3mA

13 nC

Q

gd

18 nC

C

stray

Back Metal to any Pin

33 pF

IXZR16N60 & IXZR16N60A/B

Z-MOS RF Power MOSFET

Typical Output Characteristics

0

5

10

15

20

0 20 40 60 80 100 120

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain Currnet (A)

Gate Charge vs. Gate-to-Source Voltage

V

D S

= 300V, I

D

= 9A, I

G

= 3m A

0

2

4

6

8

10

12

14

16

0 20 40 60 80

Gate Charge (nC)

Gate-to-Source Voltage (V)

Typical Transfer Characteristics

V

D S

= 50V

0

5

10

15

20

25

30

35

40

45

50

5 6 7 8 9 10 11 12 13 14 15

V

GS

, Gate-to Source Voltage (V)

I

D

, Drain Current (A)

Extended Typical Output Characteristics

0

20

40

60

80

0 20 40 60 80 100 120

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain Currnet (A)

V

D S

vs.

Capacitance

1

10

100

1000

10000

0 60 120 180 240 300 360 420 480

V

DS

Voltage (V)

Capac itance (pF)

Fig. 1 Fig. 2

Fig. 3 Fig. 4

Fig. 5

8V - 15V

7V

7.5V

6.5V

6V

Top 12V - 15V

10V

9V

8.5V

8V

7.5V

7V

6.5V

Bottom 6V

IXZR16N60

IXZR16N60

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