2SA1020-Y(T6OMI,FM Datasheet 2SA1020-O(TE6,F,M), 2SA1020-Y(T6CN,A,F, 2SA1020-Y(T6ND3,AF | P1-P3

2SA1020

2010-11-09

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1020

Power Amplifier Applications

Power Switching Applications

• Low Collector saturation voltage: V

CE (sat)

= −0.5 V (max) (I

C

= −1 A)

• High collector power dissipation: P

C

= 900 mW

• High-speed switching: t

stg

= 1.0 μs (typ.)

• Complementary to 2SC2655

Absolute Maximum Ratings

(T

a

=

25°C)

Characteristics Symbol Rating Unit

Collector-base voltage V

CBO

−50 V

Collector-emitter voltage V

CEO

−50 V

Emitter-base voltage V

EBO

−5 V

Collector current I

C

−2 A

Base current I

B

−0.2 A

Collector power dissipation P

C

900 mW

Junction temperature T

j

150 °C

Storage temperature range T

stg

−55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC TO-92MOD

JEITA ―

TOSHIBA 2-5J1A

Weight: 0.36 g (typ.)

2SA1020

2010-11-09

2

Electrical Characteristics

(T

a

=

25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current I

CBO

V

CB

= −50 V, I

E

= 0 ⎯ ⎯ −1 μA

Emitter cut-off current I

EBO

V

EB

= −5 V, I

C

= 0 ⎯ ⎯ −1 μA

Collector-emitter breakdown voltage V

(BR) CEO

I

C

= −10 mA, I

B

= 0 −50 ⎯ ⎯ V

h

FE (1)

V

CE

= −2 V, I

C

= −0.5 A 70 ⎯ 240

DC current gain

h

FE (2)

V

CE

= −2 V, I

C

= −1.5 A 40 ⎯ ⎯

Collector-emitter saturation voltage V

CE (sat)

I

C

= −1 A, I

B

= −0.05 A ⎯ ⎯ −0.5 V

Base-emitter saturation voltage V

BE (sat)

I

C

= −1 A, I

B

= −0.05 A ⎯ ⎯ −1.2 V

Transition frequency f

T

V

CE

= −2 V, I

C

= −0.5 A ⎯ 100 ⎯ MHz

Collector output capacitance C

ob

V

CB

= −10 V, I

E

= 0, f = 1 MHz ⎯ 40 ⎯ pF

Turn-on time t

on

⎯ 0.1 ⎯

Storage time t

stg

⎯ 1 ⎯

Switching time

Fall time t

f

I

B1

= 0.05 A , I

B2

= 0.05 A

DUTY CYCLE ≤ 1%

⎯ 0.1 ⎯

μs

Note: h

FE (1)

classification O: 70 to 140, Y: 120 to 240

Marking

20

μ

s

Input

I

B2

I

B1

Output

V

CC

=

−

30 V

I

B1

30 Ω

I

B2

A1020

Lot No.

Note 2

Characteristics

indicator

Part No. (or abbreviation code)

Note 2: A line under a Lot No. identifies the indication of product Labels.

Not underlined: `Pb`/INCLUDES > MCV

Underlined: `G`/RoHS COMPATIBLE or `G`/RoHS `Pb`

Please contact your TOSHIBA sales representative for details as to environmental matters such as the

RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and

of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in

electrical and electronic equipment.

2SA1020

2010-11-09

3

Collector current I

C

(A)

V

CE

– I

C

Collector-emitter voltage V

CE

(V)

Collector-emitter voltage V

CE

(V)

V

CE

– I

C

Collector current I

C

(A)

Collector-emitter voltage V

CE

(V)

Collector current I

C

(A)

V

CE

– I

C

DC current gain h

FE

Collector current I

C

(A)

h

FE

– I

C

Collector-emitter saturation voltage

V

CE (sat)

(V)

Collector current I

C

(A)

V

CE (sat)

– I

C

Collector current I

C

(A)

V

BE (sat)

– I

C

Base-emitter saturation voltage

V

BE (sat)

(V)

Common emitter

Ta = 25°C

0

−1.0

−0.2

I

B

= −5 mA

−0.4

−0.6

−0.8

−0.4 −0.8 −1.2 −1.6 −2.0 −2.4

−80

−200

−40−20

−120

−2.8

−160

−10

Common emitter

Ta = 100°C

0

−1.0

−0.2

I

B

= −5 mA

−0.4

−0.6

−0.8

−0.4 −0.8 −1.2 −1.6 −2.0 −2.4

−80

−30 −60 −40

−180

−2.8

−200

−160

−120

−20

0

−1.0

−0.2

I

B

= −10 mA

−0.4

−0.6

−0.8

−0.4 −0.8 −1.2 −1.6 −2.0 −2.4

−120

−80 −30 −20

−160

−2.8

−200

−60 −40

Common emitter

Ta = −55°C

Common emitter

I

C

/I

B

= 20

−1

−0.01

−0.5

−0.03

−0.05

−0.1

−0.3

−0.01 −0.03 −0.1 −0.3 −1 −3

Ta = 100°C

−55

25

Common emitter

I

C

/I

B

= 20

−10

−0.1

−5

−0.3

−0.5

−1

−3

−0.01 −0.03 −0.1 −0.3 −1 −3

Ta = −55°C

25

100

Common emitter

V

CE

= −2 V

1000

10

500

30

50

100

300

−0.01 −0.03 −0.1 −0.3 −1

Ta = 100°C

−55

25

−3

2SA1020-Y(T6OMI,FM

2SA1020-Y(T6OMI,FM

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