2/5
Symbol Test Conditions Min. Typ. Max. Unit
I
R
*
T
j
= 25
°
C
V
R
= V
RRM
0.5
mA
T
j
= 100
°
C
10
V
F
*I
F
= 1A
T
j
= 25
°
C
0.7
V
I
F
= 3A 1
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C
T
j
= 25
°
C V
R
= 0
150 pF
T
j
= 25
°
C V
R
= 5V
40
DYNAMIC CHARACTERISTICS
* Pulse test: t
p
≤
300
µ
s
δ
<
2%
.
Forward current flow in a Schottky rectifier is due
to majority carrier conduction. So reverse recovery
is not affected by storage charge as in conventional
PN junction diodes.
Nevertheless, when the device switches from for-
ward biased condition to reverse blocking state,
current is required to charge the depletion capaci-
tance of the diode.
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit be-
haviour analysis may be performed assuming that
Schottky rectifier consists of an ideal diode in par-
allel with a variable capacitance equal to the junc-
tion capacitance (see fig. 5 page 4/4).
TMBYV 10-60
