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STTH60L06CW

P1-P3P4-P6
®
1/6
Table 1: Main Product Characteristics
I
F(AV)
Up to 2 x 40 A
V
RRM
600 V
T
j
175°C
V
F
(typ)
1.0 V
t
rr
(max)
65 ns
STTH60L06C
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Table 3: Absolute Ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600 V
I
F(RMS)
RMS forward voltage 60 A
I
F(AV)
Average forward current
δ = 0.5
Tc = 125°C
Tc = 110°C
Per diode
Per device
30
60
A
Tc = 100°C
Tc = 80°C
Per diode
Per device
40
80
I
FSM
Surge non repetitive forward current tp = 10ms sinusoidal 210 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature 175 °C
K
A2
A1
TO-247
STTH60L06CW
K
A1
A2
September 2004 REV. 1
FEATURES AND BENEFITS
■ Ultrafast switching
■ Low reverse current
■ Low thermal resistance
■ Reduces switching & conduction losses
DESCRIPTION
The STTH60L06, which is using ST Turbo 2 600V
technology, is specially suited for use in switching
power supplies, and industrial applications, as
rectification and discontinuous mode PFC boost
diode.
Table 2: Order Codes
Part Number Marking
STTH60L06CW STTH60L06CW
STTH60L06C
2/6
Table 4: Thermal Resistance
Table 5: Static Electrical Characteristics (per diode)
Pulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs,
δ < 2%
To evaluate the conduction losses use the following equation: P = 0.95 x I
F(AV)
+ 0.010 I
F
2
(RMS)
Table 6: Dynamic Characteristics (per diode)
Symbol Parameter Value (max). Unit
R
th(j-c)
Junction to case Per diode 1.05 °C/W
Total 0.68
R
th(c)
Coupling 0.3 °C/W
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
* Reverse leakage current T
j
= 25°C V
R
= V
RRM
25 µA
T
j
= 150°C 80 800
V
F
** Forward voltage drop T
j
= 25°C I
F
= 30A 1.55 V
T
j
= 150°C 1.0 1.25
T
j
= 25°C I
F
=60A 1.78
T
j
= 150°C 1.24 1.55
Symbol Parameter Test conditions Min. Typ Max. Unit
t
rr
Reverse recovery
time
T
j
= 25°C I
F
= 0.5A Irr = 0.25A I
R
=1A 65 ns
I
F
= 1A dI
F
/dt = 50 A/µs V
R
=30V 65 90
I
RM
Reverse recovery
current
T
j
= 125°C I
F
= 30A V
R
= 400V
dI
F
/dt = 100 A/µs
11.5 16 A
t
fr
Forward recovery
time
T
j
= 25°C I
F
= 30A dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
500 ns
V
FP
Forward recovery
voltage
T
j
= 25°C I
F
= 30A dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
2.5 V
STTH60L06C
3/6
Figure 1: Conduction losses versus average
forward current (per diode)
Figure 2: Forward voltage drop versus forward
current (per diode)
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 4: Peak reverse recovery current versus
dI
F
/dt (typical values, per diode)
Figure 5: Reverse recovery time versus dI
F
/dt
(typical values, per diode)
Figure 6: Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
0
10
20
30
40
50
60
70
80
0 1020304050
P(W)
T
δ
=tp/T
tp
δ = 1
I (A)
F(AV)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
0
10
20
30
40
50
60
70
80
90
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
I (A)
FM
T =150°C
(typical values)
j
T =25°C
(maximum values)
j
V (V)
FM
T =150°C
(maximum values)
j
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Z/R
th(j-c) th(j-c)
t (s)
p
Single pulse
T
δ
=tp/T
tp
0
5
10
15
20
25
30
35
40
45
0 50 100 150 200 250 300 350 400 450 500
I (A)
RM
dI /dt(A/µs)
F
I =2 x I
FF(AV)
I=I
FF(AV)
I =0.5 x I
F F(AV)
V =400V
T =125°C
R
j
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300 350 400 450 500
t (ns)
rr
dI /dt(A/µs)
F
I=I
FF(AV)
I =0.5 x I
FF(AV)
V =400V
T =125°C
R
j
I =2 x I
FF(AV)
0
500
1000
1500
2000
2500
3000
3500
0 100 200 300 400 500
Q (nC)
rr
I =2 x I
FF(AV)
I=I
FF(AV)
I =0.5 x I
FF(AV)
V =400V
T =125°C
R
j
dI /dt(A/µs)
F
P1-P3P4-P6

STTH60L06CW

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Manufacturer:
STMicroelectronics
Description:
Rectifiers RECTIFIER
Lifecycle:
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