APTGT150DH60TG Datasheet APTGT150DH60TG | P1-P3

APTGT150DH60TG

APTGT150DH60TG – Rev 2 October, 2012

1-6

www.microsemi.com

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

VBUS

Q4

OUT2OUT1

VBUS SENSE

CR3

0/VBUS

G4

E4

NT C2

Q1

CR2

0/VBUS SENSE

NT C1

G1

E1

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 600 V

T

C

= 25°C

225

I

C

Continuous Collector Current

T

C

= 80°C

150

I

CM

Pulsed Collector Current T

C

= 25°C 350

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation

T

C

= 25°C

480 W

RBSOA Reverse Bias Safe Operating Area T

j

= 150°C 300A @ 550V

V

CES

= 600V

I

C

= 150A @ Tc = 80°C

Application

 Welding converters

 Switched Mode Power Supplies

 Uninterruptible Power Supplies

 Motor control

Features

 Trench + Field Stop IGBT3

Technology

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- RBSOA and SCSOA rated

 Kelvin emitter for easy drive

 Very low stray inductance

- Symmetrical design

- Lead frames for power connections

 Internal thermistor for temperature monitoring

 High level of integration

Benefits

 Stable temperature behavior

 Very rugged

 Solderable terminals for easy PCB mounting

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Easy paralleling due to positive TC of VCEsat

 Low profile

 RoHS Compliant

Asymmetrical - Bridge

Trench + Field Stop IGBT3

P

ower Module

APTGT150DH60TG

APTGT150DH60TG – Rev 2 October, 2012

2-6

www.microsemi.com

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V, V

CE

= 600V 250 µA

T

j

= 25°C

1.5 1.9

V

CE(sat)

Collector Emitter Saturation Voltage

V

GE

=15V

I

C

= 150A

T

j

= 150°C

1.7

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 1.5 mA 5.0 5.8 6.5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 400 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance 9200

C

oes

Output Capacitance 580

C

res

Reverse Transfer Capacitance

V

GE

= 0V

V

CE

= 25V

f = 1MHz

270

pF

T

d(on)

Turn-on Delay Time 115

T

r

Rise Time 45

T

d(off)

Turn-off Delay Time 225

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= ±15V

V

Bus

= 300V

I

C

= 150A

R

G

= 3.3

55

ns

T

d(on)

Turn-on Delay Time 130

T

r

Rise Time 50

T

d(off)

Turn-off Delay Time 300

T

f

Fall Time

Inductive Switching (150°C)

V

GE

= ±15V

V

Bus

= 300V

I

C

= 150A

R

G

= 3.3

70

ns

T

j

= 25°C 0.85

E

on

Turn on Energy

T

j

= 150°C 1.5

mJ

T

j

= 25°C 4.1

E

off

Turn off Energy

V

GE

= ±15V

V

Bus

= 300V

I

C

= 150A

R

G

= 3.3

T

j

= 150°C 5.3

mJ

Reverse diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage

600 V

T

j

= 25°C 250

I

RM

Maximum Reverse Leakage Current V

R

=600V

T

j

= 150°C 500

µA

I

F

DC Forward Current

Tc = 80°C 150 A

T

j

= 25°C 1.6 2

V

F

Diode Forward Voltage

I

F

= 150A

V

GE

= 0V

T

j

= 150°C 1.5

V

T

j

= 25°C 130

t

rr

Reverse Recovery Time

T

j

= 150°C 225

ns

T

j

= 25°C 6.9

Q

rr

Reverse Recovery Charge

T

j

= 150°C 14.5

µC

T

j

= 25°C 1.6

E

r

Reverse Recovery Energy

I

F

= 150A

V

R

= 300V

di/dt =3000A/µs

T

j

= 150°C 3.5

mJ

APTGT150DH60TG

APTGT150DH60TG – Rev 2 October, 2012

3-6

www.microsemi.com

Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

k

B

25/85

T

25

= 298.15 K 3952

K





























TT

B

R

T

11

exp

25

85/25

25

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT

0.31

R

thJC

Junction to Case Thermal Resistance

Diode 0.52

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range -40 175

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

Torque Mounting torque To Heatsink M5 2.5 4.7 N.m

Wt Package Weight 160

g

SP4 Package outline

(dimensions in mm)

ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :

See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTGT150DH60TG

APTGT150DH60TG

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