STX715

P1-P3 P4-P6 P7-P8

February 2010 Doc ID 8654 Rev 3 1/8

8

STX715

NPN low voltage transistor

Features

■ Low voltage small device for through-hole

assembly

■ High ruggedness

Applications

■ Voltage regulation

■ Relay driver

■ Generic switch

Description

The STX715 is a NPN transistor manufactured

using planar technology and it is housed in TO-92

small plastic package.

Figure 1. Internal schematic diagram

TO-92(-AP)

TO-92

Table 1. Device summary

Order codes Marking Package Packaging

STX715 X715 TO-92 Bag

STX715-AP X715 TO-92 Ammopack

www.st.com

Electrical ratings STX715

2/8 Doc ID 8654 Rev 3

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

CBO

Collector-base voltage (I

E

= 0) 140 V

V

CEO

Collector-emitter voltage (I

B

= 0) 80 V

V

EBO

Emitter-base voltage (I

C

= 0) 5 V

I

C

Collector current 1.5 A

I

CM

Collector peak current (t

P

< 5 ms) 2 A

I

B

Base current 0.3 A

I

BM

Base peak current (t

P

< 5 ms) 0.6 A

P

TOT

Total dissipation at T

amb

= 25 °C 0.9 W

T

STG

Storage temperature -65 to 150 °C

T

J

Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

R

thJA

Thermal resistance junction-ambient __ max 140 °C/W

STX715 Electrical characteristics

Doc ID 8654 Rev 3 3/8

2 Electrical characteristics

T

case

= 25 °C unless otherwise specified.

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

CES

Collector cut-off current

(V

BE

= 0)

V

CE

= 140 V 500 µA

I

CEO

Collector cut-off current

(I

B

= 0)

V

CE

= 80 V 1 mA

I

EBO

Emitter cut-off current

(I

C

= 0)

V

EB

= 5 V 100 µA

V

CEO(sus)

Collector-emitter

sustaining voltage

(I

B

= 0)

I

C

= 10 mA 80 V

V

CE(sat)

(1)

1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %

Collector-emitter

saturation voltage

I

C

= 100 mA I

B

= 10 mA

I

C

= 1 A I

B

= 100 mA

0.25

0.5

V

V

V

BE(sat)

(1)

Base-emitter saturation

voltage

I

C

= 100 mA I

B

= 10 mA

I

C

= 1 A I

B

= 100 mA

1

1.1

V

V

h

FE

(1)

DC current gain

I

C

= 100 µA V

CE

= 2 V

I

C

= 500 mA V

CE

= 2 V

I

C

= 1 A V

CE

= 2 V

140

80

40

f

T

Transition frequency I

C

= 100 mA V

CE

= 10 V 50 MHz

P1-P3 P4-P6 P7-P8

STX715

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Bipolar Transistors - BJT NPN Medium Power

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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