Electrical Characteristics Ta = 25C 3C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
Page
ns
ns
ns
pF
pF
pF
ns
75
m
3.5 S
ID = -0.2 A, VGS = -1.8 V
ID = -1.0 A, VDS = -10 V
50
Forward transfer admittance
Drain-source ON resistance
RDS(ON)3
|Yfs|
ID = -1.0 A
ID = -1.0 A
1.
2.
Rise time
*1
tr
MTM684100LBF
MOS FET
Product Standards
11
110
VDD = -6 V, VGS = -4 V to 0 V
Fall time
*1
tf 85
Turn-off delay time
*1
td(off) 235
Turn-on delay time
*1
td(on) 8 VDD = -6 V, VGS = 0 V to -4 V
1200
Short-circuit output capacitance (Common source)
Coss 110
VDS = -10 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance (Common source)
Crss
Short-circuit input capacitance (Common source)
Ciss
m
m
-0.65 -1.0 V
32 42
37 55
ID = -1.0 A, VGS = -4.0 V
RDS(ON)1
RDS(ON)2
ID = -0.5 A, VGS = -2.5 V
Gate threshold voltage
Vth ID = -1.0 mA, VDS = -6.0 V -0.3
-1.0 μA
Gate-source cutoff current
IGSS VGS = ±6.4 V, VDS = 0 ±10 μA
Drain-source cutoff current
IDSS VDS = -12 V, VGS = 0
Typ Max Unit
Drain-source surrender voltage
VDSS ID = -1 mA, VGS = 0 -12 V
Parameter Symbol Conditions Min
2of6
