OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IXGN72N60C3H1

P1-P3P4-P6P7-P7
© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.5 V
I
CES
V
CE
= V
CES
, V
GE
= 0V 250 μA
T
J
= 125°C 3 mA
I
GES
V
CE
= 0V, V
GE
= ±20V ±100 nA
V
CE(sat)
I
C
= 50A, V
GE
= 15V, Note 1 2.10 2.50 V
T
J
= 125°C 1.65
DS100053A(11/09)
V
CES
= 600V
I
C110
= 52A
V
CE(sat)
≤≤
≤≤
≤£ 2.50V
t
fi(typ)
= 55ns
GenX3
TM
600V IGBT
with Diode
High-Speed Low-Vsat PT
IGBTs 40-100 kHz Switching
IXGN72N60C3H1
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 600 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C 78 A
I
C110
T
C
= 110°C 52 A
I
CM
T
C
= 25°C, 1ms 360 A
I
A
T
C
= 25°C50A
E
AS
T
C
= 25°C 500 mJ
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 2Ω I
CM
= 150 A
(RBSOA) Clamped Inductive Load @ V
CE
≤ V
CES
P
C
T
C
= 25°C 360 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
V
ISOL
50/60Hz t = 1min 2500 V~
I
ISOL
≤ 1mA t = 1s 3000 V~
M
d
Mounting Torque 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
G
E c
E c
C
E153432
Features
z
Optimized for Low Switching Losses
z
Square RBSOA
z
Aluminium Nitride Isolation
- High Power Dissipation
z
Isolation Voltage 3000V~
z
Avalanche Rated
z
Anti-Parallel Ultra Fast Diode
z
International Standard Package
Advantages
z
High Power Density
z
Low Gate Drive Requirement
Applications
z
Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGN72N60C3H1
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 50A, V
CE
= 10V, Note 1 33 55 S
C
ies
4780 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 330 pF
C
res
117 pF
Q
g
174 nC
Q
ge
I
C
= 50A, V
GE
= 15V, V
CE
= 0.5 • V
CES
33 nC
Q
gc
72 nC
t
d(on)
27 ns
t
ri
37 ns
E
on
1.03 mJ
t
d(off)
77 130 ns
t
fi
55 110 ns
E
off
0.48 0.95 mJ
t
d(on)
26 ns
t
ri
36 ns
E
on
1.48 mJ
t
d(off)
120 ns
t
fi
124 ns
E
off
0.93 mJ
R
thJC
0.35 °C/W
R
thCS
0.05 °C/W
Inductive load, T
J
= 25
°°
°°
°C
I
C
= 50A, V
GE
= 15V
V
CE
= 480V, R
G
= 2Ω, Note 2
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 60A, V
GE
= 0V, Note 1 1.6 2.0 V
T
J
= 150°C 1.4 1.8 V
I
RM
8.3 A
t
rr
140 ns
R
thJC
0.42 °C/W
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
I
F
= 60A, V
GE
= 0V, T
J
= 100°C
-di
F
/dt = 200A/μs, V
R
= 300V
Inductive load, T
J
= 125
°°
°°
°C
I
C
= 50A, V
GE
= 15V
V
CE
= 480V, R
G
= 2Ω, Note 2
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
SOT-227B miniBLOC
M4 screws (4x) supplied
© 2009 IXYS CORPORATION, All Rights Reserved
IXGN72N60C3H1
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
100
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
350
02468101214
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
13V
7V
9V
11V
5V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
10
20
30
40
50
60
70
80
90
100
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
JunctionTemperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 100A
I
C
= 50A
I
C
= 25A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 100A
50A
25A
T
J
= 25ºC
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
P1-P3P4-P6P7-P7

IXGN72N60C3H1

Mfr. #:
Buy IXGN72N60C3H1
Manufacturer:
Littelfuse
Description:
IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 52A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet