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IRFB4115GPBF

P1-P3P4-P6P7-P8
01/06/09
www.irf.com 1
HEXFET
®
Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
GDS
Gate Drain Source
PD - 96216
IRFB4115GPbF
V
DSS
150V
R
DS
(
on
)
typ.
9.3m
Ω
max.
11m
Ω
I
D
(Silicon Limited)
104A
TO-220AB
IRFB4115GPbF
S
D
G
D
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
dv/dt Peak Diode Recovery V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.40
R
θCS
Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Max.
104
74
420
A
°C
300
-55 to + 175
± 20
2.5
220
See Fig. 14, 15, 22a, 22b
380
18
10lbf in (1.1N m)
IRFB4115GPbF
2 www.irf.com
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.11mH
R
G
= 25Ω, I
AS
= 62A, V
GS
=10V. Part not recommended for use
above this value.
I
SD
≤ 62A, di/dt ≤ 1040A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 150 ––– ––– V
∆
V
(
BR
)
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.18 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 9.3 11
mΩ
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 2.3 –––
Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 97 ––– ––– S
Q
g
Total Gate Charge ––– 77 120 nC
Q
gs
Gate-to-Source Charge ––– 28 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 26 –––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
––– 51 –––
t
d(on)
Turn-On Delay Time ––– 18 ––– ns
t
r
Rise Time ––– 73 –––
t
d(off)
Turn-Off Delay Time ––– 41 –––
t
f
Fall Time ––– 39 –––
C
iss
Input Capacitance ––– 5270 ––– pF
C
oss
Output Capacitance ––– 490 –––
C
rss
Reverse Transfer Capacitance ––– 105 –––
C
oss
eff. (ER)
Effective Output Capacitance (Ener
g
y Related) ––– 460 –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related) ––– 530 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 104 A
(Body Diode)
I
SM
Pulsed Source Current ––– ––– 420 A
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 86 ––– ns
T
J
= 25°C V
R
= 130V,
––– 110 –––
T
J
= 125°C I
F
= 62A
Q
rr
Reverse Recovery Charge ––– 300 ––– nC
T
J
= 25°C
di/dt = 100A/µs
––– 450 –––
T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 6.5 ––– A
T
J
= 25°C
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
V
DS
= 50V, I
D
= 62A
I
D
= 62A
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
showing the
V
DS
= 75V
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 120V , See Fig. 11
V
GS
= 0V, V
DS
= 0V to 120V
T
J
= 25°C, I
S
= 62A, V
GS
= 0V
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 3.5mA
V
GS
= 10V, I
D
= 62A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 150V, V
GS
= 0V
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
I
D
= 62A
R
G
= 2.2Ω
V
GS
= 10V
V
DD
= 98V
I
D
= 62A, V
DS
=0V, V
GS
= 10V
IRFB4115GPbF
www.irf.com 3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM 5.0V
≤
60µs PULSE WIDTH
Tj = 25°C
5.0V
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
2 4 6 8 10 12 14 16
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 50V
≤
60µs PULSE WIDTH
0 20406080100
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 120V
V
DS
= 75V
V
DS
= 30V
I
D
= 62A
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.0V
≤
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM 5.0V
-60 -40 -20 0 20 40 60 80 100120140160180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 62A
V
GS
= 10V
P1-P3P4-P6P7-P8

IRFB4115GPBF

Mfr. #:
Buy IRFB4115GPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 150V 104A 11mOhm 77nCAB
Lifecycle:
New from this manufacturer.
Delivery:
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