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VS-5EWH06FNTRRHM3

P1-P3P4-P6
VS-5EWH06FNHM3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
1
Document Number: 94817
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 5 A FRED Pt
®
FEATURES
• Hyperfast recovery time, reduced Q
rr
and soft
recovery
• 175 °C maximum operating junction temperature
• For PFC CRM/CCM operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC/DC section of SMPS inverters or as freewheeling
diodes. Their extremely optimized stored charge and low
recovery current minimize the switching losses and reduce
over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-252AA (D-PAK)
I
F(AV)
5 A
V
R
600 V
V
F
at I
F
1.2 V
t
rr
(typ.) 18 ns
T
J
max. 175 °C
Diode variation Single die
2, 4
3
Anode
1
N/C
TO-252AA (D-PAK)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 150 °C 5
ANon-repetitive peak surge current I
FSM
T
J
= 25 °C 70
Peak repetitive forward current I
FM
T
C
= 150 °C, f = 20 kHz, d = 50 % 10
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 5 A - 1.54 1.85
I
F
= 5 A, T
J
= 150 °C - 1.20 1.40
Reverse leakage current I
R
V
R
= V
R
rated - - 5
μA
T
J
= 150 °C, V
R
= V
R
rated - - 130
Junction capacitance C
T
V
R
= 600 V - 3.5 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8 - nH
VS-5EWH06FNHM3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
2
Document Number: 94817
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 18 -
ns
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 22 -
T
J
= 25 °C
I
F
= 5 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
-25-
T
J
= 125 °C - 35 -
Peak recovery current I
RRM
T
J
= 25 °C - 3.9 -
A
T
J
= 125 °C - 5.1 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 51 -
nC
T
J
= 125 °C - 93 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case per leg
R
thJC
--3°C/W
Approximate weight
0.3 g
0.01 oz.
Marking device Case style TO-252AA (D-PAK) 5EWH06FNH
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0 0.5 1.0 1.5 2.0 3.02.5
0.1
1
100
10
93245_01
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
I
R
- Reverse Current (µA)
V
R
- Reverse Voltage (V)
0 100 200 300 500400 600
0.001
0.01
0.1
1
10
100
93245_02
T
J
= 125 °C
T
J
= 175 °C
T
J
= 150 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
VS-5EWH06FNHM3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
3
Document Number: 94817
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0 100 200 400 500300 600
1
100
10
93245_03
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
93245_04
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
642
8
0
150
170
180
110
130
140
160
120
93245_05
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
DC
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
642
8
0
8
10
12
0
4
6
2
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
93245_06
P1-P3P4-P6

VS-5EWH06FNTRRHM3

Mfr. #:
Buy VS-5EWH06FNTRRHM3
Manufacturer:
Vishay / Siliconix
Description:
Rectifiers Freds - D-PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
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