MMBT3906T
PNP General
Purpose Transistor
Features
x Surface Mount SOT-523 Package
x
Epitaxial Planar Die Construction
Maximum Ratings
Symbol Rating Rating Unit
V
CEO
Collector-Emitter Voltage -40 V
V
CBO
Collector-Base Voltage -40 V
V
EBO
Emitter-Base Voltage -5.0 V
I
C
Collector Current -200 mA
R
șJA
Typical Thermal Resistance Junction
to Ambient
833
ć/W
P
D
Power Dissipation 150 mW
T
J
Junction Temperature -55 to +150
ć
T
STG
Storage Temperature -55 to +150
ć
Electrical Characteristics @ 25
q
C Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage
(I
C
=-1.0mAdc, I
B
=0)
-40 Vdc
V
(BR)CBO
Collector-Base Breakdown Voltage
(I
C
=-10
P
Adc, I
E
=0)
-40 Vdc
V
(BR)EBO
Emitter-Base Breakdown Voltage
(I
E
=-10
P
Adc, I
C
=0)
-5.0 Vdc
I
CBO
Collector Cut-off Current
(V
CB
=-30Vdc, I
E
=0)
-50 nAdc
I
EBO
Emitter Cut-off Current
(V
EB
=-5Vdc, I
C
=0)
-50 nAdc
ON CHARACTERISTICS
h
FE
DC Current Gain*
(I
C
=-0.1mAdc, V
CE
=-1.0Vdc)
(I
C
=-1.0mAdc, V
CE
=-1.0Vdc)
(I
C
=-10mAdc, V
CE
=-1.0Vdc)
(I
C
=-50mAdc, V
CE
=-1.0Vdc)
(I
C
=-100mAdc, V
CE
=-1.0Vdc)
60
80
100
60
30
300
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=-10mAdc, I
B
=-1.0mAdc)
(I
C
=-50mAdc, I
B
=-5.0mAdc)
-0.25
-0.4
Vdc
V
BE(sat)
Base-Emitter Saturation Voltage
(I
C
=-10mAdc, I
B
=-1.0mAdc)
(I
C
=-50mAdc, I
B
=-5.0mAdc)
-0.65 -0.85
-0.95
Vdc
SOT-523
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.059.0671.501.70
B .030 .033 0.75 0.85
C .057 .069 1.45 1.75
D .020 Nominal 0.50Nominal
E .035 .043 0.90 1.10
G .000 .004 .000 .100
H .028 .031 .70 0.80
J .004 .008 .100 .200
K .010 .014 .25 .35
A
C
B
D
E
G
H
DIMENSIONS
K
omponents
20736 Marilla Street Chatsworth
!"#
$% !"#
MCC
Revision: B 2013/01/01
TM
Micro Commercial Components
E
B
C
• Marking:3N
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
www.mccsemi.com
1 of 4
Halogen free available upon request by adding suffix "-HF"
•
