MCC72-14io8B

© 2004 IXYS All rights reserved
1 - 4
IXYS reserves the right to change limits, test conditions and dimensions
4 19
MCC 72
MCD 72
I
TRMS
= 2x180 A
I
TAVM
= 2x115 A
V
RRM
= 800-1800 V
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
Features
International standard package,
JEDEC TO-240 AA
• Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
• UL registered, E 72873
• Gate-cathode twin pins for version 1B
Applications
• DC motor control
• Softstart AC motor controller
Light, heat and temperature control
Advantages
Space and weight savings
• Simple mounting with two screws
Improved temperature and power cycling
Reduced protection circuits
Symbol Conditions Maximum Ratings
I
TRMS
, I
FRMS
T
VJ
= T
VJM
180 A
I
TAVM
, I
FAVM
T
C
= 63°C; 180° sine 115 A
T
C
= 85°C; 180° sine 85 A
I
TSM
, I
FSM
T
VJ
= 45°C t = 10 ms (50 Hz), sine 1700 A
V
R
= 0 t = 8.3 ms (60 Hz), sine 1800 A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 1540 A
V
R
= 0 t = 8.3 ms (60 Hz), sine 1640 A
i
2
dt T
VJ
= 45°C t = 10 ms (50 Hz), sine 14 450 A
2
s
V
R
= 0 t = 8.3 ms (60 Hz), sine 13 500 A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 11 850 A
2
s
V
R
= 0 t = 8.3 ms (60 Hz), sine 11 300 A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 250 A 150 A/µs
f = 50 Hz; t
P
=200 µs
V
D
=
2
/
3
V
DRM
I
G
= 0.45 A non repetitive, I
T
= I
TAVM
500 A/µs
di
G
/dt = 0.45 A/µs
(dv/dt)
cr
T
VJ
= T
VJM
;V
DR
=
2
/
3
V
DRM
1000 V/µs
R
GK
= ; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
;t
P
= 30 µs 10 W
I
T
= I
TAVM
;t
P
= 300 µs 5 W
P
GAV
0.5 W
V
RGM
10 V
T
VJ
-40...+125 °C
T
VJM
125 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz, RMS; t = 1 min 3000 V~
I
ISOL
1 mA; t = 1 s 3600 V~
M
d
Mounting torque (M5) 2.5-4.0/22-35 Nm/lb.in.
Terminal connection torque (M5) 2.5-4.0/22-35 Nm/lb.in.
Weight Typical including screws 90 g
Thyristor Modules
Thyristor/Diode Modules
6
7
4
5
3
2
1
TO-240 AA
MCD
Version 8 B
MCC
Version 8 B
MCC
Version 1 B
3671 542
361 52
3152
31542
MCD
Version 1 B
V
RSM
V
RRM
Type
V
DSM
V
DRM
V V Version 1 B 8 B Version 1 B 8 B
900 800 MCC 72-08 io1 B / io8 B MCD 72-08 io1 B / io8 B
1300 1200 MCC 72-12 io1 B / io8 B MCD 72-12 io1 B / io8 B
1500 1400 MCC 72-14 io1 B / io8 B MCD 72-14 io1 B / io8 B
1700 1600 MCC 72-16 io1 B / io8 B MCD 72-16 io1 B / io8 B
1900 1800 MCC 72-18 io1 B / io8 B MCD 72-18 io1 B / io8 B
© 2004 IXYS All rights reserved
2 - 4
IXYS reserves the right to change limits, test conditions and dimensions
4 19
MCC 72
MCD 72
Symbol Conditions Characteristic Values
I
RRM
, I
DRM
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
5mA
V
T
/V
F
I
T
/I
F
= 300 A; T
VJ
= 25°C 1.74 V
V
T0
For power-loss calculations only (T
VJ
= 125°C) 0.85 V
r
T
3.2 m
V
GT
V
D
= 6 V; T
VJ
= 25°C 2.5 V
T
VJ
= -40°C 2.6 V
I
GT
V
D
= 6 V; T
VJ
= 25°C 150 mA
T
VJ
= -40°C 200 mA
V
GD
T
VJ
= T
VJM
;V
D
=
2
/
3
V
DRM
0.2 V
I
GD
10 mA
I
L
T
VJ
= 25°C; t
P
= 10 µs; V
D
= 6 V 450 mA
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
I
H
T
VJ
= 25°C; V
D
= 6 V; R
GK
= 200 mA
t
gd
T
VJ
= 25°C; V
D
= ½ V
DRM
s
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
t
q
T
VJ
= T
VJM
; I
T
= 150 A, t
P
= 200 µs; -di/dt = 10 A/µs typ. 185 µs
V
R
= 100 V; dv/dt = 20 V/µs; V
D
=
2
/
3
V
DRM
Q
S
T
VJ
= T
VJM
; I
T
/I
F
= 50 A, -di/dt = 6 A/µs 170 µC
I
RM
45 A
R
thJC
per thyristor/diode; DC current 0.3 K/W
per module other values 0.15 K/W
R
thJK
per thyristor/diode; DC current see Fig. 8/9 0.5 K/W
per module 0.25 K/W
d
S
Creepage distance on surface 12.7 mm
d
A
Strike distance through air 9.6 mm
a Maximum allowable acceleration 50 m/s
2
Optional accessories for module-type MCC 72 version 1 B
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 200L (L = Left for pin pair 4/5) UL 758, style 1385,
Type ZY 200R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1
Dimensions in mm (1 mm = 0.0394")
MCC / MCD Version 1 B MCC Version 8 B MCD Version 8 B
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
© 2004 IXYS All rights reserved
3 - 4
IXYS reserves the right to change limits, test conditions and dimensions
4 19
MCC 72
MCD 72
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4 i
2
dt versus time (1-10 ms) Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature

MCC72-14io8B

Mfr. #:
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 72 Amps 1400V
Lifecycle:
New from this manufacturer.
Delivery:
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