NXP Semiconductors
PBHV8540X
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
PBHV8540X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 5 December 2013 7 / 14
006aab178
1
10
- 1
10
V
CEsat
(V)
10
- 2
I
C
(mA)
10
- 1
10
3
10
2
1 10
(1)
(2)
(3)
I
C
/I
B
= 5
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
006aab179
1
10
- 1
10
V
CEsat
(V)
10
- 2
I
C
(mA)
10
- 1
10
3
10
2
1 10
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 20
(2) I
C
/I
B
= 10
(3) I
C
/I
B
= 5
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
006aab180
I
C
(mA)
10
- 1
10
3
10
2
1 10
1
10
10
2
10
3
R
CEsat
(Ω)
10
- 1
(1)
(2)
(3)
I
C
/I
B
= 5
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
006aab181
I
C
(mA)
10
- 1
10
3
10
2
1 10
1
10
10
2
10
3
R
CEsat
(Ω)
10
- 1
(2) (3)(1)
T
amb
= 25 °C
(1) I
C
/I
B
= 20
(2) I
C
/I
B
= 10
(3) I
C
/I
B
= 5
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
