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FFSD08120A

P1-P3P4-P5
FFSD08120A — Silicon Carbide Schottky Diode
www.onsemi.com
Semiconductor Components Industries, LLC, 2017 Publication Order Number:
Sep, 2017, Rev. 1.0 FFSD08120A/D
1
1,3 Cathode 2. Anode
3
D-PAK
(TO-252)
2
1
FFSD08120A
Silicon Carbide Schottky Diode
1200 V, 8 A
Features
• Max Junction Temperature 175 °C
• Avalanche Rated 80 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and
higher reliability compared to Silicon. No reverse recovery
current, temperature independent switching characteristics, and
excellent thermal performance sets Silicon Carbide as the next
generation of power semiconductor. System benefits include
highest efficiency, faster operating frequency, increased power
density, reduced EMI, and reduced system size & cost.
Absolute Maximum Ratings T
C
= 25 °C unless otherwise noted.
Thermal Characteristic
Symbol Parameter FFSD08120A Unit
V
RRM
Peak Repetitive Reverse Voltage 1200 V
E
AS
Single Pulse Avalanche Energy (Note 1) 80 mJ
I
F
Continuous Rectified Forward Current @ TC < 168 °C 8 A
Continuous Rectified Forward Current @ T
C < 135 °C 22.5 A
I
F, Max
Non-Repetitive Peak Forward Surge Current
T
C
= 25 °C, 10 μs 530 A
T
C
= 150 °C, 10 μs 480 A
I
F,SM
Non-Repetitive Forward Surge Current Half-Sine Pulse, t
p
= 8.3 ms 77 A
I
F,RM
Repetitive Forward Surge Current Half-Sine Pulse, t
p
= 8.3 ms 45 A
Ptot Power Dissipation
T
C
= 25 °C 263 W
T
C
= 150 °C 44 W
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
Symbol Parameter Ratings Unit
R
θJC
Thermal Resistance, Junction to Case, Max 0.57 °C/W
FFSD08120A — Silicon Carbide Schottky Diode
www.onsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics T
C
= 25 °C unless otherwise noted.
Typical Characteristics T
J
= 25 °C unless otherwise noted.
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Reverse Characteristics Figure 4. Current Derating
Part Number Top Mark Package Reel Size Tape Width Quantity
FFSD08120A
FFSD08120A D-PAK 13” 12 mm 2500 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
F
Forward Voltage
I
F
= 8 A, T
C
= 25
o
C - 1.45 1.75
VI
F
= 8 A, T
C
= 125
o
C-1.72.0
I
F
= 8 A, T
C
= 175
o
C-2.02.4
I
R
Reverse Current
V
R
= 1200 V, T
C
= 25
o
C - - 200
μAV
R
= 1200 V, T
C
= 125
o
C - - 300
V
R
= 1200 V, T
C
= 175
o
C - - 400
Q
C
Total Capacitive Charge V = 800 V - 55 - nC
C Total Capacitance
V
R
= 1 V, f = 100 kHz - 538 -
pFV
R
= 400 V, f = 100 kHz - 50 -
V
R
= 800 V, f = 100 kHz - 40 -
Notes:
1: E
AS
of 80 mJ is based on starting T
J
= 25 °C, L = 0.5 mH, I
AS
= 18 A, V = 50 V.
0123
0
2
4
6
8
T
J
= 175
o
C
T
J
= 125
o
C
T
J
= 75
o
C
T
J
= 25
o
C
T
J
= -55
o
C
I
F
, FORWARD CURRENT (A)
V
F
, FORWARD VOLTAGE (V)
200 400 600 800 1000 1200
10
-3
10
-2
10
-1
1
10
I
R
, REVERSE CURRENT (μA)
V
R
, REVERESE VOLTAGE (V)
T
J
= 175
o
C
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 75
o
C
1000 1100 1200 1300 1400 1500
0.0
0.2
0.4
0.6
0.8
1.0
T
J
= 175
o
C
T
J
= 125
o
C
T
J
= 75
o
C
T
J
= 25
o
C
T
J
= -55
o
C
I
R
, REVERSE CURRENT (mA)
V
R
, REVERSE VOLTAGE (V)
25 50 75 100 125 150 175
0
40
80
120
160
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
I
F
, PEAK FORWARD CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
FFSD08120A — Silicon Carbide Schottky Diode
www.onsemi.com
3
Typical Characteristics T
J
= 25 °C unless otherwise noted.
Figure 5. Power Derating
Figure 6. Capacitive Charge vs.
Figure 7. Capacitance vs. Reverse Voltage Figure 8. Capacitance Stored Energy
Figure 9.
Junction-to-Case Transient Thermal Response Curve
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
0.001
0.01
0.1
1
2
DUTY CIRCLE-DESCENDING ORDER
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
NORMALIZED THERMAL
IMPEDANCE, Z
θJC
t, RECTANGULAR PULSE DURATION (sec)
P
DM
t
1
t
2
NOTES:
Z
θJC
(t) = r(t) x R
θJC
R
θJC
= 0.57
o
C/W
Duty Cycle, D = t
1
/ t
2
Peak T
J
= P
DM
x Z
θJC
(t) + T
C
25 50 75 100 125 150 175
0
50
100
150
200
250
300
P
TOT
, POWER DISSIPATION (W)
T
C
, CASE TEMPERATURE (
o
C)
0.1 1 10 100 1000
10
100
1000
5000
CAPACITANCE (pF)
V
R
, REVERESE VOLTAGE (V)
Reverse Voltage
P1-P3P4-P5

FFSD08120A

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Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1200V 8A SIC SBD
Lifecycle:
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