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MT4HTF6464HZ-800M1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
DDR2 SDRAM SODIMM
MT4HTF3264HZ – 256MB
MT4HTF6464HZ – 512MB
MT4HTF12864HZ – 1GB
Features
• 200-pin, small-outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
• 256MB (32 Meg x 64), 512MB (64 Meg x 64), 1GB
(128 Meg x 64)
• V
DD
= V
DDQ
= 1.8V
• V
DDSPD
= 1.7–3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera-
tion
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
t
CK
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Halogen-free
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Single rank
Figure 1: 200-Pin SODIMM (MO-224 R/C C)
Module height: 30mm (1.181in)
Options Marking
• Operating temperature
– Commercial (0°C ≤ T
A
≤ +70°C) None
– Industrial (–40°C ≤ T
A
≤ +85°C)
1
I
• Package
– 200-pin DIMM (halogen-free) Z
• Frequency/CL
2
– 2.5ns @ CL = 5 (DDR2-800) -80E
– 2.5ns @ CL = 6 (DDR2-800) -800
– 3.0ns @ CL = 5 (DDR2-667) -667
Notes:
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s) t
RCD
(ns)
t
RP
(ns)
t
RC
(ns)CL = 6 CL = 5 CL = 4 CL = 3
-80E PC2-6400 800 800 533 400 12.5 12.5 55
-800 PC2-6400 800 667 533 400 15 15 55
-667 PC2-5300 – 667 553 400 15 15 55
-53E PC2-4200 – – 553 400 15 15 55
-40E PC2-3200 – – 400 400 15 15 55
256MB, 512MB, 1GB (x64, SR) 200-Pin DDR2 SODIMM
Features
PDF: 09005aef83c05a5d
htf4c32_64_128x64hz.pdf - Rev. D 4/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Table 2: Addressing
Parameter 256MB 512MB 1GB
Refresh count 8K 8K 8K
Row address 8K A[12:0] 8K A[12:0] 16K A[13:0]
Device bank address 4 BA[1:0] 8 BA[2:0] 8 BA[2:0]
Device configuration 512Mb (32 Meg x 16) 1Gb (64 Meg x 16) 2Gb (128 Meg x16)
Column address 1K A[9:0] 1K A[9:0] 1K A[9:0]
Module rank address 1 S0# 1 S0# 1 S0#
Table 3: Part Numbers and Timing Parameters – 256MB
Base device: MT47H32M16,
1
512Mb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT4HTF3264H(I)Z-80E__ 256MB 32 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT4HTF3264H(I)Z-800__ 256MB 32 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT4HTF3264H(I)Z-667__ 256MB 32 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Table 4: Part Numbers and Timing Parameters – 512MB
Base device: MT47H64M16,
1
1Gb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT4HTF6464H(I)Z-80E__ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT4HTF6464H(I)Z-800__ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT4HTF6464H(I)Z-667__ 512MB 64 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Table 5: Part Numbers and Timing Parameters – 1GB Modules
Base device: MT47H128M16,
1
2Gb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT4HTF12864H(I)Z-80E__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT4HTF12864H(I)Z-800__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT4HTF12864H(I)Z-667__ 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Notes:
1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT4HTF6464HZ-667M1.
256MB, 512MB, 1GB (x64, SR) 200-Pin DDR2 SODIMM
Features
PDF: 09005aef83c05a5d
htf4c32_64_128x64hz.pdf - Rev. D 4/14 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Pin Assignments
Table 6: Pin Assignments
200-Pin DDR2 SODIMM Front 200-Pin DDR2 SODIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1 V
REF
51 DQS2 101 A1 151 DQ42 2 V
SS
52 DM2 102 A0 152 DQ46
3 V
SS
53 V
SS
103 V
DD
153 DQ43 4 DQ4 54 V
SS
104 V
DD
154 DQ47
5 DQ0 55 DQ18 105 A10 155 V
SS
6 DQ5 56 DQ22 106 BA1 156 V
SS
7 DQ1 57 DQ19 107 BA0 157 DQ48 8 V
SS
58 DQ23 108 RAS# 158 DQ52
9 V
SS
59 V
SS
109 WE# 159 DQ49 10 DM0 60 V
SS
110 S0# 160 DQ53
11 DQS0# 61 DQ24 111 V
DD
161 V
SS
12 V
SS
62 DQ28 112 V
DD
162 V
SS
13 DQS0 63 DQ25 113 CAS# 163 NC 14 DQ6 64 DQ29 114 ODT0 164 CK1
15 V
SS
65 V
SS
115 NC 165 V
SS
16 DQ7 66 V
SS
116 NC/A13
2
166 CK1#
17 DQ2 67 DM3 117 V
DD
167 DQS6# 18 V
SS
68 DQS3# 118 V
DD
168 V
SS
19 DQ3 69 NC 119 NC 169 DQS6 20 DQ12 70 DQS3 120 NC 170 DM6
21 V
SS
71 V
SS
121 V
SS
171 V
SS
22 DQ13 72 V
SS
122 V
SS
172 V
SS
23 DQ8 73 DQ26 123 DQ32 173 DQ50 24 V
SS
74 DQ30 124 DQ36 174 DQ54
25 DQ9 75 DQ27 125 DQ33 175 DQ51 26 DM1 76 DQ31 126 DQ37 176 DQ55
27 V
SS
77 V
SS
127 V
SS
177 V
SS
28 V
SS
78 V
SS
128 V
SS
178 V
SS
29 DQS1# 79 CKE0 129 DQS4# 179 DQ56 30 CK0 80 NC 130 DM4 180 DQ60
31 DQS1 81 V
DD
131 DQS4 181 DQ57 32 CK0# 82 V
DD
132 V
SS
182 DQ61
33 V
SS
83 NC 133 V
SS
183 V
SS
34 V
SS
84 NC 134 DQ38 184 V
SS
35 DQ10 85 NC/BA2
1
135 DQ34 185 DM7 36 DQ14 86 NC 136 DQ39 186 DQS7#
37 DQ11 87 V
DD
137 DQ35 187 V
SS
38 DQ15 88 V
DD
138 V
SS
188 DQS7
39 V
SS
89 A12 139 V
SS
189 DQ58 40 V
SS
90 A11 140 DQ44 190 V
SS
41 V
SS
91 A9 141 DQ40 191 DQ59 42 V
SS
92 A7 142 DQ45 192 DQ62
43 DQ16 93 A8 143 DQ41 193 V
SS
44 DQ20 94 A6 144 V
SS
194 DQ63
45 DQ17 95 V
DD
145 V
SS
195 SDA 46 DQ21 96 V
DD
146 DQS5# 196 V
SS
47 V
SS
97 A5 147 DM5 197 SCL 48 V
SS
98 A4 148 DQS5 198 SA0
49 DQS2# 99 A3 149 V
SS
199 V
DDSPD
50 NC 100 A2 150 V
SS
200 SA1
Notes:
1. Pin 85 is NC for 256MB, BA2 for 512MB and 1GB.
2. Pin 116 is NC for 256MB and 512MB, A13 for 1GB.
256MB, 512MB, 1GB (x64, SR) 200-Pin DDR2 SODIMM
Pin Assignments
PDF: 09005aef83c05a5d
htf4c32_64_128x64hz.pdf - Rev. D 4/14 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

MT4HTF6464HZ-800M1

Mfr. #:
Buy MT4HTF6464HZ-800M1
Manufacturer:
Micron
Description:
MOD DDR2 SDRAM 512MB 200SODIMM
Lifecycle:
New from this manufacturer.
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