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292165-6

P1-P3P4-P6
© 2012 IXYS CORPORATION, All Rights Reserved
DS100163A(08/12)
V
CES
= 1200V
I
C100
= 50A
V
CE(sat)
≤≤
≤≤
≤ 4.2V
t
fi(typ)
= 64ns
GenX3
TM
1200V
IGBTs w/ Diode
High-Speed PT IGBTs
for 20 - 50 kHz Switching
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 1200 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C ( Chip Capability ) 95 A
I
C100
T
C
= 100°C 50 A
I
F110
T
C
= 110°C 58 A
I
CM
T
C
= 25°C, 1ms 240 A
I
A
T
C
= 25°C 40 A
E
AS
T
C
= 25°C 750 mJ
SSOA V
GE
= 15V, T
J
= 125°C, R
G
= 3Ω I
CM
= 100 A
(RBSOA) Clamped Inductive Load V
CE
≤≤
≤≤
≤ V
CES
P
C
T
C
= 25°C 460 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062 in.) from Case for 10 260 °C
M
d
Mounting Torque ( IXGK ) 1.13/10 Nm/lb.in.
F
C
Mounting Force ( IXGX ) 20..120/4.5..14.6 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Features
z
Optimized for Low Switching Losses
z
Square RBSOA
z
High Avalanche Capability
z
Avalanche Rated
z
Anti-Parallel Ultra Fast Diode
z
International Standard Packages
Advantages
z
High Power Density
z
Low Gate Drive Requirement
Applications
z
High Frequency Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
IXGK50N120C3H1
IXGX50N120C3H1
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.0 V
I
CES
V
CE
= V
CES
, V
GE
= 0V 250 μA
Note 1,T
J
= 125°C 14 mA
I
GES
V
CE
= 0V, V
GE
= ±20V ±100 nA
V
CE(sat)
I
C
= 40A,
V
GE
= 15V, Note 2 4.2 V
T
J
= 125°C 2.6 V
G = Gate E = Emitter
C = Collector Tab = Collector
TO-264 (IXGK)
E
G
C
PLUS247 (IXGX)
G
Tab
Tab
E
C
G
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGK50N120C3H1
IXGX50N120C3H1
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 40A, V
CE
= 10V, Note 2 24 40 S
C
ies
4250 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 455 pF
C
res
120 pF
Q
g
196 nC
Q
ge
I
C
= 50A, V
GE
= 15V, V
CE
= 0.5 • V
CES
24 nC
Q
gc
84 nC
t
d(on)
31 ns
t
ri
36 ns
E
on
2.0 mJ
t
d(off)
123 ns
t
fi
64 ns
E
off
0.63 1.2 mJ
t
d(on)
23 ns
t
ri
37 ns
E
on
3.0 mJ
t
d(off)
170 ns
t
fi
315 ns
E
off
2.1 mJ
R
thJC
0.27 °C/W
R
thCK
0.15 °C/W
Inductive load, T
J
= 125°C
I
C
= 40A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 2Ω
Note 3
Inductive load, T
J
= 25°C
I
C
= 40A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 2Ω
Note 3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Reverse Diode (SONIC-FRD)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 50A, V
GE
= 0V, Note 1 2.1 2.4 V
T
J
= 125°C 2.3 V
I
RM
50 A
t
rr
75 ns
R
thJC
0.30 °C/W
I
F
= 50A, V
GE
= 0V,
-di
F
/dt = 2500A/μs, V
R
= 800V
Notes:
1. Part must be heatsunk for high-temp I
CES
measurement.
2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
3. Switching times & energy loses may increase for higher V
CE
(Clamp), T
J
or R
G
.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
TO-264 Outline
Terminals: 1 = Gate
2,4 = Collector
3 = Emitter
Terminals: 1 - Gate
2 - Collector
3 - Emitter
PLUS247
TM
Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A
2
1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b
2
2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
© 2012 IXYS CORPORATION, All Rights Reserved
Fig. 1. Output Characteristics
@ 25ºC
0
10
20
30
40
50
60
70
80
90
100
0123456
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
25
50
75
100
125
150
175
200
225
250
275
0 3 6 9 12 15 18 21 24 27 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
13V
7V
9V
11V
5V
Fig. 3. Output Characteristics
@ 125ºC
0
10
20
30
40
50
60
70
80
90
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 100A
I
C
= 50A
I
C
= 25A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
5 6 7 8 9 101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 100
A
T
J
= 25ºC
50
A
25
A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
90
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXGK50N120C3H1
IXGX50N120C3H1
P1-P3P4-P6

292165-6

Mfr. #:
Buy 292165-6
Manufacturer:
TE Connectivity
Description:
Headers & Wire Housings CT P/HDR BOX V 6P T/P NAT
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