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IXGX50N120C3H1

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGK50N120C3H1
IXGX50N120C3H1
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7. Transconductance
0
10
20
30
40
50
60
0 102030405060708090100
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
200 400 600 800 1000 1200
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 3Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180 200
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 50A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
© 2012 IXYS CORPORATION, All Rights Reserved
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
2 3 4 5 6 7 8 9 10 11 12 13 14 15
R
G
- Ohms
E
off
- MilliJoules
2
3
4
5
6
7
8
9
10
11
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
0
50
100
150
200
250
300
350
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
110
120
130
140
150
160
170
180
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 2Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
0
50
100
150
200
250
300
350
400
450
500
2 3 4 5 6 7 8 9 10 11 12 13 14 15
R
G
- Ohms
t
f i
- Nanoseconds
100
150
200
250
300
350
400
450
500
550
600
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
20 30 40 50 60 70 80
I
C
- Amperes
E
off
- MilliJoules
0
1
2
3
4
5
6
7
8
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 2
Ω ,
V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
1
2
3
4
5
6
7
8
9
10
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 2Ω
,
V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
0
50
100
150
200
250
300
350
400
450
20 30 40 50 60 70 80
I
C
- Amperes
t
f i
- Nanoseconds
80
100
120
140
160
180
200
220
240
260
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 2Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
IXGK50N120C3H1
IXGX50N120C3H1
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGK50N120C3H1
IXGX50N120C3H1
IXYS REF: G_50N120C3H1(7N)6-19-09
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
0
10
20
30
40
50
60
70
80
90
100
20 30 40 50 60 70 80
I
C
- Amperes
t
r i
- Nanoseconds
14
16
18
20
22
24
26
28
30
32
34
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 2Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC, 25ºC
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
20
40
60
80
100
120
140
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
20
22
24
26
28
30
32
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 2Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
160
180
23456789101112131415
R
G
- Ohms
t
r i
- Nanoseconds
15
20
25
30
35
40
45
50
55
60
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
P1-P3P4-P6

IXGX50N120C3H1

Mfr. #:
Buy IXGX50N120C3H1
Manufacturer:
Littelfuse
Description:
IGBT Modules High Frequency Range 40khz C-IGBT w/Diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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