SI7483ADP-T1-GE3 Datasheet SI7483ADP-T1-E3, SI7483ADP-T1-GE3 | P1-P3

Vishay Siliconix

Si7483ADP

Document Number: 73025

S09-0270-Rev. C, 16-Feb-09

www.vishay.com

1

P-Channel 30-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

®

Power MOSFETS

• New Low Thermal Resistance PowerPAK

®

Package with Low 1.07 mm Profile

• 100 % R

g

tested

APPLICATIONS

• Battery and Load Switching

- Notebook Computers

- Notebook Battery Packs

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

30

0.0057 at V

GS

= - 10 V - 24

0.0095 at V

GS

= - 4.5 V - 17

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerP AK SO-8

Bottom V

ie

w

Ordering Information:

Si7483ADP-T1-E3 (Lead (Pb)-free)

Si7483ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

G

D

P-Channel MOSFE

T

Notes

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (www.vishay.com/ppg?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

V

DS

- 30

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

- 24 - 14

A

T

A

= 70 °C

- 19 - 11

Pulsed Drain Current

I

DM

- 60

Continuous Source Current (Diode Conduction)

a

I

S

- 4.5 - 1.6

Maximum Power Dissipation

a

T

A

= 25 °C

P

D

5.4 1.9

W

T

A

= 70 °C

3.4 1.2

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

b,c

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 10 s

R

thJA

18 23

°C/W

Steady State 50 65

Maximum Junction-to-Case (Drain) Steady State R

thJC

1.0 1.5

www.vishay.com

2

Document Number: 73025

S09-0270-Rev. C, 16-Feb-09

Vishay Siliconix

Si7483ADP

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA - 1.0 - 3.0 V

Gate-Body Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V ± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 30 V, V

GS

= 0 V - 1

µA

V

DS

= - 30 V, V

GS

= 0 V, T

J

= 70 °C - 10

On-State Drain Current

a

I

D(on)

V

DS

= - 5 V, V

GS

= - 10 V - 30 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 10 V, I

D

= - 24 A 0.0047 0.0057

Ω

V

GS

= - 4.5 V, I

D

= - 17 A 0.0075 0.0095

Forward Transconductance

a

g

fs

V

DS

= - 15 V, I

D

= - 24 A 70 S

Diode Forward Voltage

a

V

SD

I

S

= - 2.9 A, V

GS

= 0 V - 0.73 - 1.1 V

Dynamic

b

Total Gate Charge Q

g

V

DS

= - 15 V, V

GS

= - 10 V, I

D

= - 24 A

120 180

nC

Gate-Source Charge Q

gs

18

Gate-Drain Charge Q

gd

33

Gate Resistance R

g

1.6 3.2 4.8 Ω

Tur n - O n D e l ay Time t

d(on)

V

DD

= - 15 V, R

L

= 15 Ω

I

D

≅ - 1.0 A, V

GEN

= - 10 V, R

g

= 6 Ω

22 35

ns

Rise Time t

r

33 50

Turn-Off Delay Time t

d(off)

210 320

Fall Time t

f

130 200

Source-Drain Reverse Recovery Time t

rr

I

F

= - 2.9 A, dI/dt = 100 A/µs 70 130

Output Characteristics

0

10

20

30

40

50

60

012345

V

GS

= 10 V thru 4 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

3 V

Transfer Characteristics

0

10

20

30

40

50

60

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

25 °C

T

C

= 125 °C

- 55 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

Document Number: 73025

S09-0270-Rev. C, 16-Feb-09

www.vishay.com

3

Vishay Siliconix

Si7483ADP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.000

0.003

0.006

0.009

0.012

0.015

0 1 02 03 04 0 50

V

GS

= 4.5 V

- On-Resistance (Ω)R

DS(on)

I

D

- Drain Current (A)

V

GS

= 10 V

0

2

4

6

8

10

0 20 40 60 80 100 120

V

DS

= 15 V

I

D

= 24 A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

1.0 1.2

0.1

10

50

0.00 0.2 0.4 0.6 0.8

T

J

= 25 °C

T

J

= 150 °C

V

SD

- Source-to-Drain V oltage (V)

- Source Current (A) I

S

1

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

1640

3280

4920

6560

8200

0 5 10 15 20 25 30

C

rss

C

oss

C

iss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 10 V

I

D

= 24 A

T

J

- Junction T emperature ( °C)

R

DS(on)

- On-Resistance

(Normalized)

0.000

0.004

0.008

0.012

0.016

0.020

0 2468 10

I

D

= 24 A

- On-Resistance (Ω)

R

DS(on)

V

GS

- Gate-to-Source V oltage (V)

SI7483ADP-T1-GE3

SI7483ADP-T1-GE3

Products related to this Datasheet