BC847B / BC847C
Transistors
1/1
NPN General Purpose Transistor
BC847B / BC847C
!
!!
!Features
1) BV
CEO
< 45V (I
C=1mA)
2) Complements the BC857B.
!
!!
!Package, marking, and Packaging specifications
BC847C
SST3
G1G
T116
3000
BC847B
SST3
G1F
T116
3000
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
!
!!
!External dimensions (Units : mm)
ROHM : SST3 (1) Emitter
(2) Base
(3) Collector
0~0.1
0.2Min.
2.4
±
0.2
1.3
0.95
0.45±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.95
0.95
+
0.2
−
0.1
−0.1
+0.2
+0.1
−0.06
+0.1
−0.05
(2)
(1)
(3)
All terminals have the same dimensions
!
!!
!Absolute maximum ratings (Ta=25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
50
45
6
0.1
0.35
150
−55~+150
Unit
V
V
V
A
∗
P
C
0.2
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power dissipation
∗ When mounted on a 7×5×0.6mm ceramic board.
!
!!
!Electrical characteristics (Ta=25°C)
Parameter
Min. Typ. Max.
Unit Conditions
50
45
6
−
−
−
−
−
−
−
−
−
−
15
5
V
V
V
µA
nA
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=30V
V
CB
=30V, Ta=150°C
−
0.58
−
0.77
V
−−
0.6
I
C
/I
B
=100mA/5mA
−−
0.25
V
I
C
/I
B
=10mA/0.5mA
V
CE
/I
C
=5V/10mA
V
CE
/I
C
=5V/2mA BC847B
200 450
−
− V
CE
/I
C
=5V/2mA BC847C
420 800
−
−
−
200
3
−
−
MHz
pF
V
CE
=5V, I
E
=−20mA, f=100MHz
V
CB
=−10V, I
E
=0, f=1MHz
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
V
BE(on)
V
CE(sat)
h
FE
f
T
Cob
Cib −
8
− pF V
EB
=0.5V, I
C
=0, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
!
!!
!Electrical characteristic curves
The electrical characteristic curves for these products are the same as those of UMT222A, SST222A, MMST2222A and
PN2222A.
