CREAT BY ART
- Glass passivated junction chip
- Ideal for automated placement
- Low-Profile Package
- Low power loss, high efficiency
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
1AL 1BL 1DL 1GL 1JL 1KL 1ML
V
RRM
50 100 200 400 600 800 1000 V
V
RMS
35 70 140 280 420 560 700 V
V
DC
50 100 200 400 600 800 1000 V
I
F(AV)
A
C
J
pF
t
rr
μs
T
J
°C
T
STG
°C
Document Number: DS_D1410010 Version: O15
S1AL - S1ML
Taiwan Semiconductor
1A, 50V - 1000V Surface Mount Rectifier
FEATURES
- Moisture sensitivity level: level 1, per J-STD-020
S1AL S1BL S1DL S1GL S1JL
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: Sub SMA
Sub SMA
S1KL S1ML UNIT
Marking code
Maximum repetitive peak reverse voltage
Polarity: Indicated by cathode band
Weight: 0.019 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER SYMBOL
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
30
I
R
μA
A
Maximum instantaneous forward voltage (Note 1)
@ 1 A
V
F
V
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
Note 1: Pulse test with PW=300μs, 1% duty cycle
- 55 to +175
Typical junction capacitance (Note 2) 9
Typical thermal resistance
R
θJL
R
θJA
°C/W
25
85
30
85
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
1.1
5
50
Typical reverse recovery time (Note 3) 1.8
Operating junction temperature range
Storage temperature range - 55 to +175
