Philips Semiconductors Product specification
TrenchMOS transistor BUK7624-55
Standard level FET
Fig.5. Typical output characteristics, T
j
= 25 ˚C
.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 ˚C
.
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
; conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
j
= 25 ˚C
.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 25 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0246810
0
20
40
60
80
100
16
12
10
9
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
ID/A
VSD/V
VGS/V =
0 20406080100
0
5
10
15
20
25
gfs/S
ID/A
0 1020304050607080
15
20
25
30
35
40
RDS(ON)/mOhm
ID/A
VGS/V =
6
6.5
7
8
9
10
-100 -50 0 50 100 150 200
0.5
1
1.5
2
2.5
BUK959-60
Tmb / degC
Rds(on) normlised to 25degC
a
024681012
0
20
40
60
80
100
ID/A
VGS/V
175 25Tj/C =
BUK759-60
-100 -50 0 50 100 150 200
0
1
2
3
4
5
Tj / C
VGS(TO) / V
max.
typ.
min.
April 1998 4 Rev 1.000
