IRF9Z24NL

P1-P3 P4-P6 P7-P9 P10-P11

IRF9Z24NS/L

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

4

8

12

16

20

0 5 10 15 20 25

G

GS

A

-V , Gate-to-Source Voltage (V)

Q , Total Gate Char

g

e

(

nC

)

FOR TEST CIRCUIT

SEE FIGURE 13

I = -7.2A

V = -44V

V = -28V

D

DS

DS

0.1

1

10

100

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

T = 25°C

T = 150°C

J

J

V = 0V

GS

SD

SD

A

-I , Reverse Drain Current (A)

-V , Source-to-Drain Voltage (V)

1

10

100

1 10 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10ms

A

-I , Drain Current (A)

-V , Drain-to-Source Volta

g

e

(

V

)

DS

D

10µs

100µs

1ms

T = 25°C

T = 175°C

Sin

g

le Pulse

C

J

0

100

200

300

400

500

600

700

1 10 100

C, Capacitance (pF)

DS

V , Drain-to-Source Volta

g

e

(

V

)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss

g

s

g

d ds

rss

g

d

oss ds

g

d

C

iss

C

oss

C

rss

IRF9Z24NS/L

www.irf.com 5

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

V

DS

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

V

DD

R

G

D.U.T.

+

-

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

0

3

6

9

12

25 50 75 100 125 150 175

C

T , Case Temperature (°C)

A

-I , Drain Current (Amps)

D

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

t , Rectangular Pulse Duration (sec)

1

thJC

D = 0.50

0.01

0.02

0.05

0.10

0.20

SINGLE PU LSE

(THERMAL RESPONSE)

A

Thermal Response (Z )

P

t

2

1

t

DM

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

12

J

DM

thJC

C

IRF9Z24NS/L

6 www.irf.com

Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Q

G

Q

GS

Q

GD

V

G

Charge

-10V

D.U.T.

V

DS

I

D

I

G

-3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

t

p

V

(

BR

)

DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

V

DD

DRIVER

A

15V

-20V

0

50

100

150

200

250

25 50 75 100 125 150 175

J

E , Single Pulse Avalanche Energy (mJ)

AS

A

Startin

g

T , Junction Temperature

(

°C

)

I

TOP -2.9A

-5.1A

BOTTOM -7.2A

D

P1-P3 P4-P6 P7-P9 P10-P11

IRF9Z24NL

Mfr. #:

Manufacturer:

Infineon Technologies

Description:

MOSFET P-CH 55V 12A TO-262

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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