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R2A20112ASP#W0

P1-P3P4-P6P7-P9
R2A20112ASP Preliminary
R03DS0047EJ0201 Rev.2.01 Page 4 of 8
Jan 08, 2016
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit Notes
Supply voltage VCC –0.3 to +24 V
GD terminal peak current Ipk-gd
–300
+1200
mA 3
GD terminal DC current Idc-gd
–15
+60
mA
ZCD terminal current Izcd
+3
–3
mA
RT terminal current Irt –200 μA 4
Vref terminal current Iref –5 mA
Vref terminal load capacitor Cref min 1000 pF
Cref max 1 μF
COMP terminal current Icomp ±1 mA
Terminal voltage Vt-group1 –0.3 to Vcc V 5
Vt-group2 –0.3 to Vref V 6
Vref terminal voltage Vt-ref –0.3 to Vref + 0.3 V
OCP terminal voltage Vt-ocp *–1 to Vref V 7
Power dissipation Pt 1 W 8
Operating ambient temperature Ta-opr –40 to +125 °C
Junction temperature Tj –40 to +150 °C 9
Storage temperature Tstg –55 to +150 °C
Notes: 1. Rated voltages are with reference to the PGND terminal.
2. For rated currents, inflow to the IC is indicated by (+), and outflow by (–).
3. Shows the transient current when driving a capacitive load.
4. RT terminal's resistor is fixed 33 kΩ to GND.
5. This is the rated voltage for the following pins:
Nothing
6. This is the rated voltage for the following pins:
FB, SS, RAMP, TM
7. Minus value is peak voltage. Do not impress the DC voltage of the minus.
8. θja = 120°C/W
This value is a thing mounting on 40 × 40 (thickness: 1.6 mm) [mm
2
],
a glass epoxy board of wiring density 10%.
9. Stresses exceeding the absolute maximum ratings may damage the device.
These are stress ratings only. Functional operation above the recommended operating ambient temperature
range is not implied.
Extended exposure to stresses above the absolute maximum ratings may affect device reliability.
R2A20112ASP Preliminary
R03DS0047EJ0201 Rev.2.01 Page 5 of 8
Jan 08, 2016
Electrical Characteristics
(Ta = 25°C, VCC = 12 V, RT = 33 kΩ, RAMP = 820 pF, TM = 2.2 μF, SS = 1.0 μF, OCP = GND)
Item Symbol Min Typ Max Unit Test Conditions
Supply UVLO turn-on threshold Vuvlh 9.8 10.5 11.2 V
UVLO turn-off threshold Vuvll 8.8 9.3 9.8 V
UVLO hysteresis Hysuvl 0.7 1.2 1.7 V
Standby current Istby — 85 170 μA VCC = 8.9 V
Operating current Icc — 4.2 6.3 mA
VREF Output voltage Vref 4.925 5.00 5.075 V Isource = –1 mA
Line regulation Vref-line — 5 20 mV
Isource = –1 mA
Vcc = 10 V to 24 V
Load regulation Vref-load — 5 20 mV Isource = –1 mA to –5 mA
Temperature stability dVref — ±80 — ppm/°C Ta = –40 to +125°C *
1
Error
amplifier
Feedback voltage Vfb 2.452 2.490 2.528 V FB-COMP short
Input bias current Ifb –0.5 –0.3 –0.1 μA
Measured pin: FB
FB = 3 V *
1
Open loop gain Av — 60 — dB *
1
Upper clamp voltage Vclamp-comp 4.2 4.3 4.4 V FB = 2.0 V
Low voltage Vl-comp — 0.1 0.3 V FB = 3.0 V
Source current Isrc-comp — –120 — μA FB = 1.5 V
COMP = 2.5 V *
1
Sink current Isnk-comp — 330 — μA FB = 3.5 V
COMP = 2.5 V
Transconductance gm 120 200 290 μs FB = 2.45V ↔ 2.55 V
COMP = 2.5 V
Ramp
RAMP charge current
at DUVP disable condition
Ic-ramp1 –60 –50 –40 μA FB = 2.4 V
RAMP charge current
at DUVP enable condition
Ic-ramp2 –32 –25 –18 μA FB = 2 V
RAMP discharge current Id-ramp 7 15 29 mA RAMP = 1 V
Low voltage Vl-ramp — 17 200 mV Isink = 100 μA
Slave
control
Phase delay Phase 160 180 200 deg
FB = 2.5 V, COMP = 2 V
*
1, 2
On time ratio Ton-ratio 0 — 5 %
Notes: *1 Design spec
*
2
Ton-ratio =
Ton-s
Ton-m
× 100 [%]1 –
Phase =
Tdelay
Tperiod
× 360 [deg]
GD-M
GD-S
Tperiod (100μs)
Tdelay
Ton-m (50μs)
Ton-s
R2A20112ASP Preliminary
R03DS0047EJ0201 Rev.2.01 Page 6 of 8
Jan 08, 2016
Electrical Characteristics (cont.)
(Ta = 25°C, VCC = 12 V, RT = 33 kΩ, RAMP = 820 pF, TM = 2.2 μF, SS = 1.0 μF, OCP = GND)
Item Symbol Min Typ Max Unit Test Conditions
Gate drive
(GD-M &
GD-S)
Gate drive rise time tr-gd — 20 100 ns
FB-COMP short
CL = 100 pF
tr
90%
10%
Gate drive fall time tf-gd — 5 30 ns
FB-COMP short
CL = 100 pF
tf
90%
10%
Gate drive low voltage Vol1-gd — 0.02 0.1 V Isink = 2 mA
Vol2-gd — 0.01 0.2 V Isink = 1 mA, VCC = 5 V
Gate drive high voltage Voh-gd 11.5 11.9 — V Isource = –2 mA *
1
Over current
protection
(OCP-M &
OCP-S
OCP threshold voltage Vocp 0.27 0.30 0.33 V
OCP source current Iocp –10 –5 –2.5 μA OCP = 0 V
ON/OFF timer
protection for
Boost diode
short
ON/OFF timer threshold voltage Vtm 3.52 3.6 3.68 V
ON/OFF timer hysteresis Hys-tm 2.1 2.2 2.3 V
Charge current Isrc-tm –54 –45 –36 μA TM = 2 V, OCP-M = 1 V
Discharge current
at TM disable condition
Isnk-tm1 36 45 54 μA TM = 2 V
Discharge current
at TM enable condition
Isnk-tm2 4.2 5 5.8 μA TM = 5 V to 2 V
PFC output
abnormality
protection
Dynamic OVP threshold voltage Vdovp
Vfb×
1.035
Vfb×
1.050
Vfb×
1.065
V COMP = 2.5 V
Static OVP threshold voltage Vsovp
Vfb×
1.075
Vfb×
1.090
Vfb×
1.105
V COMP = 2.5 V
Static OVP hysteresis Hys-sovp 50 100 150 mV COMP = 2.5 V
Dynamic UVP threshold voltage Vduvp —
Vfb×
0.930
Vfb×
0.950
V COMP = 2.5 V *
1
FB low detect threshold voltage Vfblow 0.45 0.50 0.55 V COMP = 2.5 V
FB low detect hysteresis Hysfblow 0.16 0.20 0.24 V COMP = 2.5 V
Zero current
detector
(ZCD-M &
ZCD-S)
Upper clamp voltage Vzcdh 4.0 4.5 5.0 V Isource = –3 mA
Lower clamp voltage Vzcdl –0.5 –0.1 0.4 V Isink = 3 mA
ZCD low threshold voltage Vzcd-lo 0.9 1.3 1.6 V *
1
ZCD hysteresis Hyszcd 130 300 410 mV *
1
Input bias current Izcd –14 –10 –6 μA 1.2 V < Vzcd < 2.5 V
ZCD-S open
detector
Slave ZCD open detect delay
time
tzcds — 100 — ms
ZCD-S: OPEN
Gate drive 10 kHz *
1
Soft start Charge current Ic-ss –14 –10 –6 μA SS = 3 V, FB = 1 V
Restart Restart time delay Tstart 210 280 350 μs
ZCD-M = 10 kΩ to GND
ZCD-S = 10 kΩ to GND *
2
Notes: *1 Design spec
*
2
Tstart (280μs)
[ A period without ZCD-M trigger]
Restart pulse width: 1μs
(Design spec)
ZCD-M
Vzcd-lo (1.3V: provide 300mV hysteresis)
GD-M
P1-P3P4-P6P7-P9

R2A20112ASP#W0

Mfr. #:
Buy R2A20112ASP#W0
Manufacturer:
Renesas Electronics
Description:
Power Factor Correction - PFC PFC IC
Lifecycle:
New from this manufacturer.
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