Si4401FDY
www.vishay.com
Vishay Siliconix
S17-1783-Rev. A, 27-Nov-17
2
Document Number: 75996
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -40 - - V
V
DS
temperature coefficient V
DS
/T
J
I
D
= -250 μA
--33-
mV/°C
V
GS(th)
temperature coefficient V
GS(th)
/T
J
-4.7-
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -1 - -2.3 V
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
DS
= -40 V, V
GS
= 0 V - - -1
μA
V
DS
= -40 V, V
GS
= 0 V, T
J
= 55 °C - - -10
On-state drain current
a
I
D(on)
V
DS
-5 V, V
GS
= 0 V -10 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= -10 V, I
D
= -10 A - 0.0118 0.0142
V
GS
= -4.5 V, I
D
= -10 A - 0.0150 0.0183
Forward transconductance
a
g
fs
V
DS
= -10 V, I
D
= -10 A - 45 - S
Dynamic
b
Input capacitance C
iss
V
DS
= -20 V, V
GS
= 0 V, f = 1 MHz
- 4000 -
pFOutput capacitance C
oss
- 280 -
Reverse transfer capacitance C
rss
- 270 -
Total gate charge Q
g
V
DS
= -20 V, V
GS
= -10 V, I
D
= -10 A - 66 100
nC
V
DS
= -20 V, V
GS
= -4.5 V, I
D
= -10 A - 31 47
Gate-source charge Q
gs
V
DS
= -20 V, V
GS
= -4.5 V, I
D
= -10 A
-9.8-
Gate-drain charge Q
gd
-10-
Gate resistance R
g
f = 1 MHz 0.5 1.6 3
Turn-on delay time t
d(on)
V
DD
= -20 V, R
L
= 2 , I
D
-10 A,
V
GEN
= -10 V, R
g
= 1
-1224
ns
Rise time t
r
-612
Turn-off delay time t
d(off)
-4488
Fall time t
f
-612
Turn-on delay time t
d(on)
V
DD
= -20 V, R
L
= 2 , I
D
-10 A,
V
GEN
= -4.5 V, R
g
= 1
-2754
Rise time t
r
- 75 150
Turn-off delay time t
d(off)
-3978
Fall time t
f
-3978
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
T
C
= 25 °C - - -4.5
A
Pulse diode forward current I
SM
---80
Body diode voltage V
SD
I
S
= -5 A, V
GS
= 0 V - -0.77 -1.1 V
Body diode reverse recovery time t
rr
I
F
= -10 A, di/dt = 100 A/μs, T
J
= 25 °C
-2448ns
Body diode reverse recovery charge Q
rr
-1632nC
Reverse recovery fall time t
a
-12-
ns
Reverse recovery rise time t
b
-12-
