ATAES132 [I
2
C Summary Datasheet]
Atmel-8762DS-CryptoAuth-ATAES132-I2C-Datasheet-Summary_072014
8
5. Electrical Characteristics
5.1 Absolute Maximum Ratings*
5.2 Reliability
The ATAES132 is fabricated with Atmel high reliability CMOS EEPROM manufacturing technology. The reliability ratings
in Table 5-1 apply to each byte of the EEPROM memory.
Table 5-1. EEPROM Reliability
(1)
Note: 1. These specifications apply to every byte of the User Memory, Configuration Memory, and Key Memory. The
Write Endurance specification also applies to the random number generator EEPROM Seed Register.
Operating Temperature . . . . . . . . . . . .−40C to +85C
Storage Temperature . . . . . . . . . . . −65C to + 150C
Maximum Operating Voltage . . . . . . . . . . . . . . . . 6.0V
DC Output Current. . . . . . . . . . . . . . . . . . . . . . . 5.0mA
Voltage on Any Pin . . . . . . . . . . -0.7V to (V
CC
+ 0.7V)
HBM ESD . . . . . . . . . . . . . . . . . . . . . . . 3kV minimum
*Notice: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only,
and functional operation of the device at these or
any other condition beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Parameter Min Typical Max Units
Write Endurance (Each byte) 100,000 Write Cycles
Data Retention (At 55C) 10 Years
Data Retention (At 35C) 30 50 Years
Read Endurance Unlimited Read Cycles