TK8P60W
3
6.
6.
6.
6. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
6.1.
6.1.
6.1.
6.1. Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
th
R
DS(ON)
Test Condition
V
GS
= ±30 V, V
DS
= 0 V
V
DS
= 600 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 0.4 mA
V
GS
= 10 V, I
D
= 4.0 A
Min
600
2.7
Typ.
0.42
Max
±1
10
3.7
0.5
Unit
µA
V
Ω
6.2.
6.2.
6.2.
6.2. Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
Symbol
C
iss
C
rss
C
oss
C
o(er)
r
g
t
r
t
on
t
f
t
off
dv/dt
Test Condition
V
DS
= 300 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 0 to 400 V, V
GS
= 0 V
V
DS
= OPEN, f = 1 MHz
See Figure 6.2.1
V
DD
= 0 to 400 V, I
D
= 4.0 A
Min
50
Typ.
570
2.5
16
26
7.5
20
40
5.5
70
Max
Unit
pF
Ω
ns
V/ns
Fig.
Fig.
Fig.
Fig. 6.2.1
6.2.1
6.2.1
6.2.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
6.3.
6.3.
6.3.
6.3. Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
≈ 400 V, V
GS
= 10 V, I
D
= 8.0 A
Min
Typ.
18.5
3.5
9.0
Max
Unit
nC
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Diode dv/dt ruggedness
Symbol
V
DSF
t
rr
Q
rr
I
rr
dv/dt
Test Condition
I
DR
= 8.0 A, V
GS
= 0 V
I
DR
= 4.0 A, V
GS
= 0 V
-dI
DR
/dt = 100 A/µs
I
DR
= 4.0 A, V
GS
= 0 V, V
DD
= 400 V
Min
15
Typ.
230
1.9
17
Max
-1.7
Unit
V
ns
µC
A
V/ns
2014-09-17
Rev.3.0