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BYV29B-600,118

P1-P3P4-P6P7-P9P10-P12P13-P14
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
1. Product profile
1.1 General description
Ultra-fast, epitaxial rectifier diode in a surface mount plastic package.
Product availability:
BYV29B-600 in SOT404 (D2PAK).
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
2. Pinning information
[1] It is not possible to make connection to pin 2 of the SOT404 package.
BYV29B-600
Rectifier diode ultrafast
Rev. 2 — 14 September 2011 Product data sheet
D2PAK
Low forward voltage Fast switching
Soft recovery characteristic High thermal cycling performance.
Switched-mode power supplies Low loss rectification.
V
R
600 V V
F
1.03 V
I
F(AV)
9A t
rr
60 ns
Table 1. Pinning - SOT404 (D2PAK), simplified outline and symbol
Pin Description Simplified outline Symbol
1 no connection
SOT404 (D2PAK)
2 cathode (k)
[1]
3 anode (a)
mb mounting base;
connected to cathode (k)
mb
13
2
A
001aaa020
K
BYV29B_600 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 14 September 2011 2 of 13
NXP Semiconductors
BYV29B-600
Rectifier diode ultrafast
3. Ordering information
4. Limiting values
[1] Neglecting switching and reverse current losses.
Table 2. Ordering information
Type number Package
Name Description Version
BYV29B-600 D2PAK plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse voltage - 600 V
V
RWM
crest working reverse voltage - 600 V
V
R
reverse voltage -600V
I
F(AV)
average forward current square wave; = 0.5; T
mb
120 C
[1]
-9A
I
FRM
repetitive peak forward current square wave; t = 25 s; = 0.5;
T
mb
120 C
-18A
I
FSM
non-repetitive peak forward current sinusoidal; with reapplied V
RRM(max)
t
p
=10ms - 70 A
t
p
=8.3ms - 77 A
T
stg
storage temperature 40 +150 C
T
j
junction temperature - +150 C
P1-P3P4-P6P7-P9P10-P12P13-P14

BYV29B-600,118

Mfr. #:
Buy BYV29B-600,118
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers EPI
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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