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PT333-3B

P1-P3P4-P6P7-P9
LifecyclePhase:
Revision : 2
Expired Period: Forever
Release Date:2015-06-07 13:23:56.0
1
Copyright © 2010, Everlight All Rights Reserved. Release Date : Jun.2.2015. Issue No: DPT-0000468 _Rev.2
www.everlight.com
5mm Phototransistor
PT333-3B
Features
․Fast response time
․High photo sensitivity
․Pb free
․The product itself will remain within RoHS compliant version.
Descripti
on
․PT333-3B is a high speed and high sensitive NPN silicon
NPN epitaxial planar phototransistor molded in a standard 5 mm package.
Due to its Black epoxy the device is sensitive to infrared radiation.
.
Applications
․Infrared applied system
․Camera
․Printer
․Cockroach catcher
LifecyclePhase:
Revision : 2
Expired Period: Forever
Release Date:2015-06-07 13:23:56.0
DATASHEET
5mm Phototransistor
PT333-3B
2
Copyright © 2010, Everlight All Rights Reserved. Release Date :Jun.2.2015. Issue No: DPT-0000468_Rev.2
www.everlight.com
Device Selection Guide
Chip
Materials
Lens Color
Silicon Black
Absolute Maximum Ratings (Ta=25 )℃
Parameter Symbol Rating Unit
Collector-Emitter Voltage V
CEO
30
V
Emitter-Collector-Voltage V
ECO
5
V
Collector Current I
C
20
mA
Operating Temperature T
opr
-40~+85
°C
Storage Temperature T
stg
-40~ +100
°C
Lead Soldering Temperature Tsol
260
℃ for 5sec
°C
Power Dissipation at
(or below)
25
℃Free Air Temperature
P
c
75
mW
Notes: *1:Soldering time
≦
5 seconds.
LifecyclePhase:
Revision : 2
Expired Period: Forever
Release Date:2015-06-07 13:23:56.0
DATASHEET
5mm Phototransistor
PT333-3B
3
Copyright © 2010, Everlight All Rights Reserved. Release Date :Jun.2.2015. Issue No: DPT-0000468_Rev.2
www.everlight.com
Electro-Optical Characteristics (Ta=25℃)
Parameter Symbol Min. Typ. Max. Unit Condition
Collector – Emitter
Breakdown Voltage
BV
CEO
30 ----- -----
V
I
C
=100μA
Ee=0mW/cm
2
Emitter-Collector
Breakdown Voltage
BV
ECO
5 ----- -----
V
I
E
=100μA
Ee=0mW/cm
2
Collector-Emitter
Saturation Voltage
V
CE(sat)
----- ----- 0.4
V
I
C
=2mA
Ee=1mW/cm
2
Rise Time
t
r
----- 15 -----
μS
V
CE
=5V
I
C
=1mA
RL=1000
Ω
Fall Time
t
f
----- 15 -----
Collector Dark Current
I
CEO
----- ----- 100
nA
Ee=0mW/cm
2
V
CE
=20V
On State Collector Current
I
C(on)
0.7 3.0 -----
mA
Ee=1mW/cm
2
V
CE
=5V
λp=940nm
Rang Of Spectral Bandwidth
λ
0.5
840 ----- 1100
nm ----
Wavelength of Peak Sensitivity
λ
P
----- 940 -----
nm ----
Rankings
Parameter Symbol Min Max
Unit Test Condition
G
Ic(ON)
0.70 1.90
mA
VcE=5V
Ee=1mW/cm²
H
1.14 2.60
J
1.77 3.61
K 2.67 5.07
L 4.18 7.07
P1-P3P4-P6P7-P9

PT333-3B

Mfr. #:
Buy PT333-3B
Manufacturer:
Description:
Optical Sensors Phototransistors IR Phototransisto
Lifecycle:
New from this manufacturer.
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