Characteristics STPS3030CT/CG/CR
2/9
1 Characteristics
Table 1. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 30 V
I
F(RMS)
RMS forward current 30 A
I
F(AV)
Average forward current
T
c
= 135° C Per diode 15
A
δ = 0.5 Per device 30
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 250 A
I
RRM
Peak repetitive reverse current t
p
= 2 µs square F= 1 kHz 1 A
I
RSM
Non repetitive peak reverse current t
p
= 100 µs square 3 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25° C 4100 W
T
stg
Storage temperature range -65 to + 150 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
150 °C
dV/dt Critical rate of rise of reverse voltage (rated V
R
, T
j
= 25° C) 10000 V/µs
Table 2. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case TO-220AB - D
2
PAK - I
2
PAK
Per diode 1.2
°C/WTo t al 0 . 8
R
th(c)
Coupling 0.4
Table 3. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.26 x I
F(AV)
+ 0.0107 I
F
2
(RMS)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
0.23 1.0
mA
T
j
= 125° C 125 180
V
F
(1)
Forward voltage drop
T
j
= 25° C I
F
= 15 A 0.44 0.49
V
T
j
= 125° C I
F
= 15 A 0.36 0.40
T
j
= 25° C I
F
= 30 A 0.53 0.58
T
j
= 125° C I
F
= 30 A 0.49 0.53
Ptot
dTj
--------------
1
Rth j a–()
--------------------------
<
