October 2012 : Rev0 2/7
www.GPTechGroup.com
GP2M020A050H
GP2M020A050F
Electrical Characteristics : T
C
=25Ԩ, unless otherwise noted
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=4.6mH, I
AS
= 18A, V
DD
= 50V, R
G
= 25, Starting T
J
= 25 Ԩ
3 I
SD
18A, di/dt 200A/µs , V
DD
BV
DS
, Starting T
J
= 25 Ԩ
4. Pulse Test :Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Parameter Symbol Test condition Min Typ Max Units
OFF
Drain-Source Breakdown Voltage BV
DSS
V
GS
= 0 V, I
D
= 250 µA 500 -- -- V
Zero Gate Voltage Drain Current I
DSS
V
DS
= 500 V, V
GS
= 0 V -- -- 1 µA
V
DS
= 400 V, T
C
= 125
°
C-- -- 10 µA
Forward Gate-Source Leakage Current I
GSSF
V
GS
= 30 V, V
DS
= 0 V -- -- 100 nA
Reverse Gate-Source Leakage Current I
GSSR
V
GS
= -30 V, V
DS
= 0 V -- -- -100 nA
ON
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 3 -- 5 V
Drain-Source On-Resistance R
DS(on)
V
GS
= 10 V, I
D
= 9 A -- 0.25 0.30
Forward Transconductance
(Note 4)
g
FS
V
DS
= 30 V, I
D
= 9 A -- 14 -- S
DYNAMIC
Input Capacitance C
iss
V
DS
= 25 V, V
GS
= 0 V, --
2880
-- pF
Output Capacitance C
oss
f = 1.0 MHz --
283
-- pF
Reverse Transfer Capacitance C
rss
--
10
-- pF
SWITCHING
Turn-On Delay Time
(Note 4,5)
t
d(on)
V
DD
= 250 V, I
D
= 18 A, --
64
-- ns
Turn-On Rise Time
(Note 4,5)
t
r
R
G
= 25 --
61
-- ns
Turn-Off Delay Time
(Note 4,5)
t
d(off)
--
123
-- ns
Turn-Off Fall Time
(Note 4,5)
t
f
--
38
-- ns
Total Gate Charge
(Note 4,5)
Q
g
V
DS
= 400 V, I
D
= 18 A, --
44
-- nC
Gate-Source Charge
(Note 4,5)
Q
gs
V
GS
= 10 V --
14
-- nC
Gate-Drain Charge
(Note 4,5)
Q
gd
--
13
-- nC
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
I
S
--- -- -- 18 A
Diode Forward Current
Maximum Pulsed Drain-Source
I
SM
--- -- -- 72 A
Diode Forward Current
Drain-Source Diode Forward Voltage V
SD
V
GS
= 0 V, I
S
= 18 A -- -- 1.5 V
Reverse Recovery Time
(Note 4)
t
rr
V
GS
= 0 V, I
S
= 18 A -- 421 -- ns
Reverse Recovery Charge
(Note 4)
Q
rr
dI
F
/ dt = 100 A/µs -- 5.9 -- µC
