AAT003 Low-Resistance Angle Sensor
1
NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344-3617 Phone: (952) 829-9217 Fax: (952) 829-9189 www.nve.com ©NVE Corporation
AAT003 Low-Resistance TMR Angle Sensors
Functional Diagram
Sin
Vcc
GND
Cos
Vcc
GND
R
o
t
a
t
i
o
n
Features
Tunneling Magnetoresistance (TMR) technology
Low power
High output signal without amplification
Immune to airgap variations
Operates with as little as 30 Oersted field
Sine and cosine and outputs
40°C to +125°C operating temperature
Ultraminiature TDFN6 packages
Applications
Battery-powered applications
Knob position sensors
Rotary encoders
Direct microcontroller interfaces
Automotive rotary position sensors
Motor shaft position sensors
Description
AAT00x angle sensors use unique Tunneling
Magnetoresistance (TMR) elements for large signals and
low power consumption.
The AAT003 is a low-resistance member of NVE’s ground-
breaking AATxxx family, with a typical bridge resistance of
40 kilohms versus the megohm range for the AT001 and
AAT009.
The lower device resistance reduces Johnson noise, and is
also ideal for direct microcontroller interfaces because its
lower output impedance can quickly charge microcontroller
sample-and-hold input stages.
The sensors provide sine and cosine signals defining the
angle of rotation. Outputs are proportional to the supply
voltage and peak-to-peak output voltages are much larger
than conventional sensor technologies.
Parts are packaged in NVE’s 2.5 mm x 2.5 mm x 0.8 mm
TDFN6 surface-mount package.
AAT003 Low-Resistance Angle Sensor
2
NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344-3617 Phone: (952) 829-9217 Fax: (952) 829-9189 www.nve.com ©NVE Corporation
Absolute Maximum Ratings
Parameter Min. Max. Units
Supply voltage 7 Volts
Reverse supply voltage 12 Volts
Storage temperature 40 170
°C
ESD (Human Body Model) 2000 Volts
Applied magnetic field
Unlimited
1
Oe
Operating Specifications
Parameter Symbol Min. Typ. Max. Units Test Condition
Operating temperature
T
min
; T
max
40 125 °C
Device resistance 20 40 60 k
25°C with required
magnetic field.
Peak-to-peak output signal
V
PP-SIN
V
PP-COS
130 200 mV/V Over full rotation.
Offset voltage
V
OFFSET-SIN
V
OFFSET-COS
10 +10 mV/V
Supply voltage V
CC
0 5.5 V
Required applied magnetic field 30 200 Oe
Repeatability, fixed bias
2
±0.5 deg.
Repeatability, variable bias
3
±3 deg.
Nonsinusoidality
4
±1.5%
% of peak-to-peak output;
50 Oe applied field; 25°C
Temperature coefficient of resistance TCOR +0.09
%/°C
Output voltage temperature coefficient TCOV 0.13
%/°C
Constant
supply voltage.
Notes:
1. Large magnetic fields CANNOT damage NVE sensors.
2. “Fixed Bias” means a fixed airgap between the bias magnet and sensor so the magnetic field at the sensor is constant.
3. “Variable Bias” means the magnetic field strength at the sensor can vary across the specification range.
4. Maximum deviation of either output from an ideal sine wave.
AAT003 Low-Resistance Angle Sensor
3
NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344-3617 Phone: (952) 829-9217 Fax: (952) 829-9189 www.nve.com ©NVE Corporation
Operation
Overview—Unique TMR technology
The heart of the unique sensor is an array of four Tunneling Magnetoresistance (TMR) elements in each quadrant. TMR
technology enables low power and miniaturization, making the sensors ideal for battery operation.
In a typical configuration, an external magnet provides a saturating magnetic field in the plane of the sensor, as illustrated below
for a bar magnet and a radially-magnetized disk magnet:
Figure 1. Sensor operation.
The device contains four sensing resistors at 90 degree intervals. The resistors are connected as two half-bridges, providing the
sine and cosine voltage outputs. For each half bridge, the resistance of one element increases and the other decreases as the field
rotates. Thus the bridge resistance, device resistance, and output impedances remain constant with rotation.
Transfer function
The half-bridge configuration provides a simple interface and can simplify external circuitry such as amplifiers and comparators.
Outputs are sinusoidal, centered around half the supply, and ratiometric with supply voltage. Mathematically, the outputs can be
expressed as:
V
SIN
= [V
CC-SIN
][(V
SIN-MAX
– V
SIN-MIN
) / 2)Sin θ + V
CC-SIN
/ 2 + V
OFFSET-SIN
]
V
COS
= [V
CC-COS
][(V
COS-MAX
– V
COS-MIN
) / 2)Cos θ + V
CC-COS
/ 2 + V
OFFSET-COS
]
Where:
θ is the magnetic field angle;
V
COS
and V
SIN
are the sensor output voltages (mV/V);
V
CC-SIN
and V
CC-COS
are the sensor supply voltages (normally tied together);
V
SIN-MAX
, V
COS-MAX
, V
SIN-MIN
, and V
COS-MIN
are the sensor output peak signal levels (mV/V); and
V
OFFSET-SIN
and V
OFFSET-COS
are the sensor offset voltages (mV/V),
defined as the average of the maximum and minimum outputs minus
half the supply voltage.
Wide range of magnets and magnet locations
The sensors operate with fields from 30 Oe to 200 Oe. This wide magnetic field range allows inexpensive magnets and operation
over a wide range of magnet spacing. Larger or stronger magnets require more distance to avoid oversaturating the sensor; smaller
or weaker magnets may require closer spacing. Low-cost radially-magnetized ferrite disk magnets can be used with these sensors
in production. Bar magnets are also used in some configurations.
Ideal for battery-powered applications

AAT003-10E

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