Characteristics STPS10170C
2/10 DocID12541 Rev 4
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 0.65x I
F(AV)
+ 0.02 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values per diode at T
amb
= 25 °C unless otherwise stated)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 170 V
I
F(RMS)
Forward rms current 10 A
I
F(AV)
Average forward current, δ = 0.5, square wave T
c
= 155 °C
Per diode 5
A
Total 10
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 75 A
P
ARM
(1)
Repetitive peak avalanche power t
p
= 10 µs, T
j
= 125 °C 220 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(2)
175 °C
1. For pulse time duration derating, please refer to Figure 3. More details regarding the avalanche energy measurements and
diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode 4
°C/WTotal 2.4
R
th(c)
Coupling 0.7
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
--10µA
T
j
= 125 °C - - 10 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 5 A
- - 0.92
V
T
j
= 125 °C - 0.69 0.75
T
j
= 25 °C
I
F
= 10 A
--1.0
T
j
= 125 °C - 0.79 0.85
1. Pulse test: t
p
= 5 ms, < 2%
2. Pulse test: t
p
= 380 µs, < 2%
