2SD1767T100Q

2SD1767 / 2SD1859
Transistors
Rev.A 1/2
Medium power transistor (80V, 0.7A)
2SD1767 / 2SD1859
zFeatures
1) High breakdown voltage, BV
CEO=80V, and
high current, I
C=0.7A.
2) Complements the 2SB1189 / 2SB1238.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
80
80
5
0.7
2
1
150
55 to +150
Unit
V
V
V
A(DC)
1
A(Pulse)
0.5
3
2
1
2SD1859
2SD1767
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
1 Pw=10ms, duty=1/2
2 When mounted on a 40×40×0.7 mm ceramic board.
3 Printed circuit board 1.7 mm thick, collector plating 1cm
2
or larger.
zPackaging specifications and h
FE
Type
2SD1767
MPT3
PQR
DC
T100
1000
2SD1859
ATV
QR
TV2
2500
Denot
es h
FE
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
zExternal dimensions (Unit : mm)
(1) Emitter
(2) Collector
(3) Base
0.451.05
Taping specifications
0.5
(
1
)
0.65Max.
2.54
(
2
)
2.54
(
3
)
6.8
1.0
14.5
0.9
4.4
2.5
2SD1767
ROHM : MPT3
EIAJ : SC-62
2SD1859
ROHM : ATV
(1) Base
(2) Collector
(3) Emitter
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(
3
)
4.5
(
1
)
(
2
)
0.5
4.0
2.5
1.0
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
80
80
5
0.2
120
10
0.5
0.5
0.4
V
V
V
µA
µA
V
MHz
pF
I
C
=50µA
I
C
=2mA
I
E
=50µA
V
CB
=50V
V
EB
=4V
h
FE
120
390
V
CE
/I
C
=3V/0.1A
I
C
/I
B
=500mA/50mA
V
CE
=10V, I
E
=−50mA, f=100MHz
V
CB
=10V, I
E
=0A, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
2SD1767 / 2SD1859
Transistors
Rev.A 2/2
zElectrical characteristics curves
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Ground emitter output characteristics
0
0.2
0.4
0.6
0.8
1.0
2 4 6 8 100
Ta
=
25
°C
I
B
=0A
4mA
6mA
7mA
3mA
2mA
1mA
5mA
10mA
9mA
8mA
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.2
Ground emitter propagetion characteristics
0
0.1
0.2
0.5
1
2
5
10
20
50
0.2 0.6 0.4 0.8 1.0 1.2 1.4 1.6
Ta
=
25
°C
V
CE
=
6V
COLLECTOR CURRENT : I
C
(mA)
DC CURRENT GAIN : h
FE
Fig.3 DC current gain vs. collector current
12 5102050
100 200 500 5000
200
500
1000
100
50
Ta
=
25
°C
V
CE
=
5V
3
V
1
V
TRANSITION FREQUENCY
: f
T
(MHz)
EMITTER CURRENT : I
E
(mA)
Fig.5 Resistance raito vs. emitter current
1 2 5 10 20 50 100
1000
100
10
20
50
200
500
Ta
=
25
°C
V
CE
=
5V
COLLECTOR OUTPUT CAPACITANCE
: C
ob
(pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.6 Collector output capacitance
vs. collector-base voltage
0.5 1 2 5 10 20
20
5
10
50
100
Ta
=
25
°C
f
=
1MHz
I
C
=
0A
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current
0.01
0.02
0.05
0.1
0.2
2 5 10 20 50 100 200 500 1000
Ta
=
25
°C
I
C
/I
B
=20
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.8 Safe operating area (2SD1859)
10
1
100m
10m
1m
2m
5m
20m
50m
200m
500m
2
5
1000 100 10 1 0.1 0.2 0.5 2 5 20 50 200 500
I
C
Max (Pulse)
P
W
=
10
ms
P
W
=
100
ms
DC
T
c
=25°C
Single
nonrepetitive
pulse
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.9 Safe operating area
(2SD1767)
2
0.2
0.5
1
0.1
0.05
0.02
2 1 5 10 20 50 100
I
C
Max Pulse
I
C
Max
P
W
=
10
ms
P
W
=
100
ms
DC
T
c
=25°C
Single
nonrepetitive
pulse
EMITTER INPUT CAPACITANCE
: C
ib (pF)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Emitter input capacitance
vs. emitter-base voltage
0.5 1 2 5 10 20
20
5
10
50
100
Ta
=
25
°C
f
=
1MHz
I
C
=
0A
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

2SD1767T100Q

Mfr. #:
Manufacturer:
Description:
Bipolar Transistors - BJT NPN 80V 0.7A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet