RN1118MFV,L3F Datasheet RN1115MFV,L3F, RN1115,LF(CT, RN1114MFV,L3F | P1-P3

RN1114~RN1118

2014-03-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1114, RN1115, RN1116, RN1117, RN1118

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z With built-in bias resistors.

z Simplified circuit design

z Reduced number of parts and simplified manufacturing process

z Complementary to RN2114 to 2118

Equivalent Circuit and Bias Resistor Values

Absolute Maximum Ratings

(Ta = 25

°

C)

Characteristic Symbol Rating Unit

Collector-base voltage V

CBO

50 V

Collector-emitter voltage

RN1114 to 1118

V

CEO

50 V

RN1114 5

RN1115 6

RN1116 7

RN1117 15

Emitter-base voltage

RN1118

V

EBO

25

V

Collector current I

C

100 mA

Collector power dissipation P

C

100 mW

Junction temperature T

j

150 °C

Storage temperature range

RN1114 to 1118

T

stg

−55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

JEDEC ―

JEITA ―

TOSHIBA 2-2H1A

Weight: 2.4mg (typ.)

Type No. R

1

(kΩ)R

2

(kΩ)

RN1114 1

10

RN1115 2.2

10

RN1116 4.7

10

RN1117 10 4.7

RN1118 47 10

Unit: mm

Start of commercial production

1994-08

RN1114~RN1118

2014-03-01

2

Electrical Characteristics

(Ta = 25

°

C)

Characteristic Symbol

Test

Circuit

Test Condition Min Typ. Max Unit

RN1114 to 1118 I

CBO

― V

CB

= 50 V, I

E

= 0 ― ― 100 nA

Collector cut-off current

RN1114 to 1118

I

CEO

― V

CE

= 50 V, I

B

= 0 ― ― 500 nA

RN1114 ― V

EB

= 5 V, I

C

= 0 0.35 ― 0.65

RN1115 ― V

EB

= 6 V, I

C

= 0 0.37 ― 0.71

RN1116 ― V

EB

= 7 V, I

C

= 0 0.36 ― 0.68

RN1117 ― V

EB

= 15 V, I

C

= 0 0.78 ― 1.46

Emitter cut-off current

RN1118

I

EBO

― V

EB

= 25 V, I

C

= 0 0.33 ― 0.63

mA

RN1114 to 16, 18 ― 50 ― ―

DC current gain

RN1117

h

FE

―

V

CE

= 5 V, I

C

= 10 mA

30 ― ―

―

Collector-emitter

saturation voltage

RN1114 to 1118 V

CE (sat)

―

I

C

= 5 mA, I

B

= 0.25 mA ― 0.1 0.3 V

RN1114 ― 0.6 ― 2.0

RN1115 ― 0.7 ― 2.5

RN1116 ― 0.8 ― 2.5

RN1117 ― 1.5 ― 3.5

Input voltage (ON)

RN1118

V

I (ON)

―

V

CE

= 0.2 V, I

C

= 5 mA

2.5 ― 10.0

V

RN1114 ― 0.3 ― 0.9

RN1115 ― 0.3 ― 1.0

RN1116 ― 0.3 ― 1.1

RN1117 ― 0.3 ― 2.3

Input voltage (OFF)

RN1118

V

I (OFF)

―

V

CE

= 5 V, I

C

= 0.1 mA

0.5 ― 5.7

V

Transition frequency RN1114 to 1118 f

T

― V

CE

= 10 V, I

C

= 5 mA ― 250 ― MHz

Collector output

capacitance

RN1114 to 1118 C

ob

―

V

CB

= 10 V, I

E

= 0,

f = 1 MHz

― 3.0 6.0 pF

RN1114 ― 0.7 1.0 1.3

RN1115 ― 1.54 2.2 2.86

RN1116 ― 3.29 4.7 6.11

RN1117 ― 7.0 10.0 13.0

Input Resistor

RN1118

R

1

―

32.9 47.0 61.1

kΩ

RN1114 ― ― 0.1 ―

RN1115 ― ― 0.22 ―

RN1116 ― ― 0.47 ―

RN1117 ― ― 2.13 ―

Resistor Ratio

RN1118

R

1

/R

2

―

― 4.7 ―

―

RN1114~RN1118

2014-03-01

3

IC - VI (ON)

0.1

1

10

100

0.1 1 10

INPUT VOLTAGE

VI (ON) (V)

COLLECTOR CURRENT

IC (mA)

COMMON EMITTER

VCE = 0.2V

25

-25

RN1114

IC - VI (ON)

0.1

1

10

100

0.1 1 10

INPUT VOLTAGE

VI (ON) (V)

COLLECTOR CURRENT

IC (mA)

COMMON EMITTER

VCE = 0.2V

25

-25

RN1115

Ta = 100°C

IC - VI (ON)

0.1

1

10

100

0.1 1 10

INPUT VOLTAGE

VI (ON) (V)

COLLECTOR CURRENT

IC (mA)

COMMON EMITTER

VCE = 0.2V

25

-25

RN1116

IC - VI (ON)

0.1

1

10

100

0.1 1 10 100

INPUT VOLTAGE

VI (ON) (V)

COLLECTOR CURRENT

IC (mA)

COMMON EMITTER

VCE = 0.2V

25

-25

RN1117

Ta = 100°C

IC - VI (ON)

0.1

1

10

100

0.1 1 10 100

INPUT VOLTAGE

VI (ON) (V)

COLLECTOR CURRENT

IC (mA)

COMMON EMITTER

VCE = 0.2V

25

-25

RN1118

Ta = 100°C

RN1118MFV,L3F

RN1118MFV,L3F

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