2
Electrical Specications
1. Small/Large -signal data measured in a fully de-embedded test xture form T
A
= 25°C.
2. Pre-assembly into package performance veried 100% on-wafer per AMMC-6220 published specications.
3. This nal package part performance is veried by a functional test correlated to actual performance at one or
more frequencies.
4. Specications are derived from measurements in a 50 W test environment. Aspects of the amplier performance
may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise
(Гopt) matching.
Table 1. RF Electrical Characteristics
Parameter Min Typ. Max Sigma Unit
Small-signal Gain, Ga 22 0.5 dB
Noise Figure into 50 Ω, NF 2.5 0.2 dB
Output Power at 1dB Gain Compression, P-1dB +10 0.8 dBm
Third Order Intercept Point;
∆f=100MHz; Pin=-20dBm, OIP3
+20 1.1 dBm
Input Return Loss, RLin -12 0.3 dB
Output Return Loss, Rlout -16 0.7 dB
Reverse Isolation, Isol -45 0.5 dB
Table 2. Recommended Operating Range
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal
Resistance at backside temperature (Tb) = 25°C calculated from measured data.
Description
Specications
Unit CommentsMin. Typical Max.
Drain Supply Current, Id 55 70 mA (Vd = 3 V, Under any RF power drive and
temperature)
Table 3. Thermal Properties
Parameter Test Conditions Value
Thermal Resistance, qch-b qch-b = 27 °C/W
Absolute Minimum and Maximum Ratings
Table 4. Minimum and Maximum Ratings
Specications
Description Pin Min. Max. Unit Comments
Drain Supply Voltage Vd 7 V
Drain Current Id 100 mA
RF Input Power (Pin) RFIN 15 dBm CW
Channel Temperature +150 °C
Storage Temperature -65 +150 °C
Maximum Assembly Temperature +300 °C 60 second maximum
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
